DGW50N65CTH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DGW50N65CTH
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 357 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Paquete / Cubierta: TO247
Búsqueda de reemplazo de DGW50N65CTH IGBT
DGW50N65CTH Datasheet (PDF)
dgw50n65cth.pdf

RoHS DGW50N65CTH COMPLIANT IGBT Discrete V 650 V CEI 50 A CV I = A 1.95 V CE(SAT) C 50 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ru
dgw50n65ctl1.pdf

RoHS COMPLIANT DGW50N65CTL1 IGBT Discrete V 650 V CEI 50 A CVCE(SAT) 1.60 V I = AC 50 Applications High frequency switching application Resonant converters Uninterruptible power supply Circuit Welding converters Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Posi
dgw50n65bth.pdf

RoHS DGW50N65BTH COMPLIANT IGBT Discrete V 650 V CEI 50 A CV I = A 1.95 V CE(SAT) C 50 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ru
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: DDB6U180N16RR-B11 | MMG600WB120B6TC
History: DDB6U180N16RR-B11 | MMG600WB120B6TC



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