DGW50N65CTH Datasheet and Replacement
Type Designator: DGW50N65CTH
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 357 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 50 nS
Qg ⓘ - Total Gate Charge, typ: 210 nC
Package: TO247
DGW50N65CTH substitution
DGW50N65CTH Datasheet (PDF)
dgw50n65cth.pdf

RoHS DGW50N65CTH COMPLIANT IGBT Discrete V 650 V CEI 50 A CV I = A 1.95 V CE(SAT) C 50 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ru
dgw50n65ctl1.pdf

RoHS COMPLIANT DGW50N65CTL1 IGBT Discrete V 650 V CEI 50 A CVCE(SAT) 1.60 V I = AC 50 Applications High frequency switching application Resonant converters Uninterruptible power supply Circuit Welding converters Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Posi
dgw50n65bth.pdf

RoHS DGW50N65BTH COMPLIANT IGBT Discrete V 650 V CEI 50 A CV I = A 1.95 V CE(SAT) C 50 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ru
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: SGT15T60SD1T
Keywords - DGW50N65CTH transistor datasheet
DGW50N65CTH cross reference
DGW50N65CTH equivalent finder
DGW50N65CTH lookup
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History: SGT15T60SD1T



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