TGAN20N135F3D Todos los transistores

 

TGAN20N135F3D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGAN20N135F3D

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 151 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 14 nS

Coesⓘ - Capacitancia de salida, typ: 32 pF

Encapsulados: TO3PN

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TGAN20N135F3D datasheet

 ..1. Size:968K  trinnotech
 tgan20n135f3d.pdf pdf_icon

TGAN20N135F3D

TGAN20N135F3D Field Stop Trench IGBT Features TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft Switching Application, UPS, Welder, Inverter Device Package Marking Remark TGAN2

 3.1. Size:947K  trinnotech
 tgan20n135fd.pdf pdf_icon

TGAN20N135F3D

TGAN20N135FD Field Stop Trench IGBT Features TO 3PN 1350V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft Switching Application, UPS, Welder, Inverter Device Package Marking Remark TGAN20N135F

 6.1. Size:950K  trinnotech
 tgan20n150fd.pdf pdf_icon

TGAN20N135F3D

TGAN20N150FD Field Stop Trench IGBT Features TO 3PN 1500V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Inverterized Microwave Ovens, Soft Switching Appl

 6.2. Size:1118K  trinnotech
 tgan20n120fd.pdf pdf_icon

TGAN20N135F3D

TGAN20N120FD Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN20N120FD TO-3PN TGAN20N120FD RoHS Abso

MOSTRAR MÁS

Otros transistores... DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH , DGW75N65CTL1 , ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , SGT50T65FD1PT , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD .

History: SPT40N120T1B1 | SGP13N60UF | NGTB45N60S2 | TGAN60N65F2DR | SGP10N60RUF | SPT50N65F1A1 | RJP60F5DPK

 

 

 

 

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