TGAN20N135F3D Todos los transistores

 

TGAN20N135F3D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGAN20N135F3D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 151 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 14 nS
   Coesⓘ - Capacitancia de salida, typ: 32 pF
   Paquete / Cubierta: TO3PN
     - Selección de transistores por parámetros

 

TGAN20N135F3D Datasheet (PDF)

 ..1. Size:968K  trinnotech
tgan20n135f3d.pdf pdf_icon

TGAN20N135F3D

TGAN20N135F3DField Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN2

 3.1. Size:947K  trinnotech
tgan20n135fd.pdf pdf_icon

TGAN20N135F3D

TGAN20N135FDField Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN20N135F

 6.1. Size:950K  trinnotech
tgan20n150fd.pdf pdf_icon

TGAN20N135F3D

TGAN20N150FDField Stop Trench IGBTFeaturesTO 3PN 1500V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationECGApplications Induction Heating, Inverterized Microwave Ovens, Soft Switching Appl

 6.2. Size:1118K  trinnotech
tgan20n120fd.pdf pdf_icon

TGAN20N135F3D

TGAN20N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationEApplications :CInduction Heating, Soft switching application GDevice Package Marking RemarkTGAN20N120FD TO-3PN TGAN20N120FD RoHSAbso

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IGP50N60T | DIM1600ECM17-A | IGP10N60T

 

 
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