All IGBT. TGAN20N135F3D Datasheet

 

TGAN20N135F3D Datasheet and Replacement


   Type Designator: TGAN20N135F3D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 151 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 32 pF
   Qgⓘ - Total Gate Charge, typ: 84 nC
   Package: TO3PN
      - IGBT Cross-Reference

 

TGAN20N135F3D Datasheet (PDF)

 ..1. Size:968K  trinnotech
 tgan20n135f3d.pdf pdf_icon

TGAN20N135F3D

TGAN20N135F3DField Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN2

 3.1. Size:947K  trinnotech
 tgan20n135fd.pdf pdf_icon

TGAN20N135F3D

TGAN20N135FDField Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN20N135F

 6.1. Size:950K  trinnotech
 tgan20n150fd.pdf pdf_icon

TGAN20N135F3D

TGAN20N150FDField Stop Trench IGBTFeaturesTO 3PN 1500V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationECGApplications Induction Heating, Inverterized Microwave Ovens, Soft Switching Appl

 6.2. Size:1118K  trinnotech
 tgan20n120fd.pdf pdf_icon

TGAN20N135F3D

TGAN20N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationEApplications :CInduction Heating, Soft switching application GDevice Package Marking RemarkTGAN20N120FD TO-3PN TGAN20N120FD RoHSAbso

SHOW MORE

Datasheet: DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH , DGW75N65CTL1 , ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , RJP30E2DPP-M0 , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD .

History: T0510VB45E

Keywords - TGAN20N135F3D transistor datasheet

 TGAN20N135F3D cross reference
 TGAN20N135F3D equivalent finder
 TGAN20N135F3D lookup
 TGAN20N135F3D substitution
 TGAN20N135F3D replacement

 

 
Back to Top

 


 
.