TGAN25N120FDR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGAN25N120FDR
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 338 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 21 nS
Coesⓘ - Capacitancia de salida, typ: 105 pF
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de TGAN25N120FDR IGBT
TGAN25N120FDR Datasheet (PDF)
tgan25n120fdr.pdf

TGAN25N120FDRField Stop Trench IGBTFeatures 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN25N120FDR
tgan25n120nd.pdf

TGAN25N120NDNPT Trench IGBTFeatures: 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationEApplications :CInduction Heating, Soft switching application GDevice Package Marking RemarkTGAN25N120ND TO-3PN TGAN25N120ND RoHSAbsolute Maximum R
tgan20s150fd.pdf

TGAN20S150FDReverse Conducting Field Stop Trench IGBTFeaturesTO 3PN 1500V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationECGApplications Induction Heating, Inverterize
tgan20s135fd.pdf

TGAN20S135FDReverse Conducting Field Stop Trench IGBTFeatures 1350V Reverse Conducting Field Stop Trench IGBT Technology Excellent EMI Behavior High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationECApplicationsG Induction Heat
Otros transistores... ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , FGA25N120ANTD , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD .
History: NGTB50N60FWG | 2MBI300VN-170-50 | MG25Q1BS11 | DM2G300SH6NE | DL2G100SH6A | 1MBI600U4B-120 | APTGT35DA120D1
History: NGTB50N60FWG | 2MBI300VN-170-50 | MG25Q1BS11 | DM2G300SH6NE | DL2G100SH6A | 1MBI600U4B-120 | APTGT35DA120D1



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