TGAN25N120FDR - аналоги, основные параметры, даташиты
Наименование: TGAN25N120FDR
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 338 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
tr ⓘ - Время нарастания типовое: 21 nS
Coesⓘ - Выходная емкость, типовая: 105 pF
Тип корпуса: TO3PN
Аналог (замена) для TGAN25N120FDR
- подбор ⓘ IGBT транзистора по параметрам
TGAN25N120FDR даташит
tgan25n120fdr.pdf
TGAN25N120FDR Field Stop Trench IGBT Features 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN25N120FDR
tgan25n120nd.pdf
TGAN25N120ND NPT Trench IGBT Features 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN25N120ND TO-3PN TGAN25N120ND RoHS Absolute Maximum R
tgan20s150fd.pdf
TGAN20S150FD Reverse Conducting Field Stop Trench IGBT Features TO 3PN 1500V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Inverterize
tgan20s135fd.pdf
TGAN20S135FD Reverse Conducting Field Stop Trench IGBT Features 1350V Reverse Conducting Field Stop Trench IGBT Technology Excellent EMI Behavior High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C Applications G Induction Heat
Другие IGBT... ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , RJP30E2DPP-M0 , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD .
History: STGW75H65DFB2-4
History: STGW75H65DFB2-4
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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