TGAN25N120FDR - аналоги и описание IGBT

 

TGAN25N120FDR - аналоги, основные параметры, даташиты

Наименование: TGAN25N120FDR

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 338 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃

tr ⓘ - Время нарастания типовое: 21 nS

Coesⓘ - Выходная емкость, типовая: 105 pF

Тип корпуса: TO3PN

 Аналог (замена) для TGAN25N120FDR

- подбор ⓘ IGBT транзистора по параметрам

 

TGAN25N120FDR даташит

 ..1. Size:924K  trinnotech
tgan25n120fdr.pdfpdf_icon

TGAN25N120FDR

TGAN25N120FDR Field Stop Trench IGBT Features 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN25N120FDR

 4.1. Size:948K  trinnotech
tgan25n120nd.pdfpdf_icon

TGAN25N120FDR

TGAN25N120ND NPT Trench IGBT Features 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN25N120ND TO-3PN TGAN25N120ND RoHS Absolute Maximum R

 9.1. Size:940K  trinnotech
tgan20s150fd.pdfpdf_icon

TGAN25N120FDR

TGAN20S150FD Reverse Conducting Field Stop Trench IGBT Features TO 3PN 1500V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Inverterize

 9.2. Size:910K  trinnotech
tgan20s135fd.pdfpdf_icon

TGAN25N120FDR

TGAN20S135FD Reverse Conducting Field Stop Trench IGBT Features 1350V Reverse Conducting Field Stop Trench IGBT Technology Excellent EMI Behavior High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C Applications G Induction Heat

Другие IGBT... ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , RJP30E2DPP-M0 , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD .

History: STGW75H65DFB2-4

 

 

 

 

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