Справочник IGBT. TGAN25N120FDR

 

TGAN25N120FDR Даташит. Аналоги. Параметры и характеристики.


   Наименование: TGAN25N120FDR
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 338 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 21 nS
   Coesⓘ - Выходная емкость, типовая: 105 pF
   Тип корпуса: TO3PN
     - подбор IGBT транзистора по параметрам

 

TGAN25N120FDR Datasheet (PDF)

 ..1. Size:924K  trinnotech
tgan25n120fdr.pdfpdf_icon

TGAN25N120FDR

TGAN25N120FDRField Stop Trench IGBTFeatures 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN25N120FDR

 4.1. Size:948K  trinnotech
tgan25n120nd.pdfpdf_icon

TGAN25N120FDR

TGAN25N120NDNPT Trench IGBTFeatures: 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationEApplications :CInduction Heating, Soft switching application GDevice Package Marking RemarkTGAN25N120ND TO-3PN TGAN25N120ND RoHSAbsolute Maximum R

 9.1. Size:940K  trinnotech
tgan20s150fd.pdfpdf_icon

TGAN25N120FDR

TGAN20S150FDReverse Conducting Field Stop Trench IGBTFeaturesTO 3PN 1500V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationECGApplications Induction Heating, Inverterize

 9.2. Size:910K  trinnotech
tgan20s135fd.pdfpdf_icon

TGAN25N120FDR

TGAN20S135FDReverse Conducting Field Stop Trench IGBTFeatures 1350V Reverse Conducting Field Stop Trench IGBT Technology Excellent EMI Behavior High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationECApplicationsG Induction Heat

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: TA49047 | VS-GB50LA120UX | STGW15H120DF2 | APT30GT60BRD | DL2G100SH6A | IXGC16N60B2 | MG17200D-BN4MM

 

 
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