TGAN30N135FD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGAN30N135FD1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 329
Tensión máxima colector-emisor |Vce|, V: 1350
Tensión máxima puerta-emisor |Vge|, V: 25
Colector de Corriente Continua a 25℃ |Ic|, A: 60
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.9
Tensión máxima de puerta-umbral |VGE(th)|, V: 7
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 14
Capacitancia de salida (Cc), typ, pF: 85
Carga total de la puerta (Qg), typ, nC: 200
Paquete / Cubierta: TO3PN
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TGAN30N135FD1 Datasheet (PDF)
tgan30n135fd1.pdf
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TGAN30N135FD1Field Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft switching applicationDevice Package Marking RemarkTGAN30N135FD1 TO-3PN TGAN30N
tgan30n120fd.pdf
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TGAN30N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationEApplications :CInduction Heating, Soft switching application GDevice Package Marking RemarkTGAN30N120FD TO-3PN TGAN30N120FD RoHSAbso
tgan30s160fd.pdf
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TGAN30S160FDReverse Conducting Field Stop Trench IGBTFeatures 1600V Reverse Conducting Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwave ov
tgan30s135fd.pdf
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TGAN30S135FDReverse Conducting Field Stop Trench IGBTFeatures 1350V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwa
Otros transistores... TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR , FGA25N120ANTD , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D .
![TGAN30N135FD1](https://alltransistors.com/images/us.png)
![TGAN30N135FD1](https://alltransistors.com/images/es.png)
![TGAN30N135FD1](https://alltransistors.com/images/ru.png)
Liste
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