All IGBT. TGAN30N135FD1 Datasheet

 

TGAN30N135FD1 Datasheet and Replacement


   Type Designator: TGAN30N135FD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 329 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Qgⓘ - Total Gate Charge, typ: 200 nC
   Package: TO3PN
      - IGBT Cross-Reference

 

TGAN30N135FD1 Datasheet (PDF)

 ..1. Size:931K  trinnotech
 tgan30n135fd1.pdf pdf_icon

TGAN30N135FD1

TGAN30N135FD1Field Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft switching applicationDevice Package Marking RemarkTGAN30N135FD1 TO-3PN TGAN30N

 6.1. Size:1072K  trinnotech
 tgan30n120fd.pdf pdf_icon

TGAN30N135FD1

TGAN30N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationEApplications :CInduction Heating, Soft switching application GDevice Package Marking RemarkTGAN30N120FD TO-3PN TGAN30N120FD RoHSAbso

 8.1. Size:912K  trinnotech
 tgan30s160fd.pdf pdf_icon

TGAN30N135FD1

TGAN30S160FDReverse Conducting Field Stop Trench IGBTFeatures 1600V Reverse Conducting Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwave ov

 8.2. Size:928K  trinnotech
 tgan30s135fd.pdf pdf_icon

TGAN30N135FD1

TGAN30S135FDReverse Conducting Field Stop Trench IGBTFeatures 1350V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwa

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IGP50N60T | STGWA75H65DFB2 | IGC142T120T8RM | IGU04N60T | DGTD120T40S1PT | TGAN20S135FD | DGW50N65CTH

Keywords - TGAN30N135FD1 transistor datasheet

 TGAN30N135FD1 cross reference
 TGAN30N135FD1 equivalent finder
 TGAN30N135FD1 lookup
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