TGAN40N120F2DW Todos los transistores

 

TGAN40N120F2DW - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGAN40N120F2DW
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 347 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 103 pF
   Paquete / Cubierta: TO3PN

 Búsqueda de reemplazo de TGAN40N120F2DW - IGBT

 

TGAN40N120F2DW Datasheet (PDF)

 ..1. Size:866K  trinnotech
tgan40n120f2dw.pdf

TGAN40N120F2DW
TGAN40N120F2DW

TGAN40N120F2DWField Stop Trench IGBTFeatures 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsWelder, UPS, Inverter, SolarDevice Package Marking RemarkTGAN40N120F2DW TO-3PN TGAN40N120F2DW RoHSAbsolute Maximu

 1.1. Size:921K  trinnotech
tgan40n120f2d.pdf

TGAN40N120F2DW
TGAN40N120F2DW

TGAN40N120F2D Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N120F2D TO-3PN TGAN40N120F2D RoHS A

 3.1. Size:945K  trinnotech
tgan40n120fdr.pdf

TGAN40N120F2DW
TGAN40N120F2DW

TGAN40N120FDRField Stop Trench IGBTFeatures 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N120FDR TO-3P

 6.1. Size:865K  trinnotech
tgan40n135fd.pdf

TGAN40N120F2DW
TGAN40N120F2DW

TGAN40N135FD Field Stop Trench IGBTFeatures 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwave ovens Soft Switching Applicat

 6.2. Size:938K  trinnotech
tgan40n110fd.pdf

TGAN40N120F2DW
TGAN40N120F2DW

TGAN40N110FDField Stop Trench IGBTFeatures 1100V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft switching applicationDevice Package Marking RemarkTGAN40N110FD TO-3PN TGAN40N110FD RoHSAbsolu

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
Back to Top

 


TGAN40N120F2DW
  TGAN40N120F2DW
  TGAN40N120F2DW
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top