TGH40N120F2DR Todos los transistores

 

TGH40N120F2DR IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGH40N120F2DR

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 625 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 18 nS

Coesⓘ - Capacitancia de salida, typ: 94 pF

Encapsulados: TO247

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TGH40N120F2DR datasheet

 ..1. Size:934K  trinnotech
tgh40n120f2dr.pdf pdf_icon

TGH40N120F2DR

TGH40N120F2DR Field Stop Trench IGBT TO-247 Features 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification G C E Applications UPS, Welder, Inverter, Solar, PTC H

 0.1. Size:953K  trinnotech
atgh40n120f2dr.pdf pdf_icon

TGH40N120F2DR

ATGH40N120F2DR Field Stop Trench IGBT Features TO-247 1200V Field Stop Trench IGBT Technology AEC-Q101 Qualified High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant G C E JEDEC Qualification Applications PTC heater

 7.1. Size:869K  trinnotech
tgh40n135fd.pdf pdf_icon

TGH40N120F2DR

TGH40N135FD Field Stop Trench IGBT Features 1350V Field Stop Trench IGBT Technology TO-247 High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications G C E Induction Heating Inverterized microwave ovens UPS Solar Inve

 8.1. Size:897K  trinnotech
tgh40n65f2ds.pdf pdf_icon

TGH40N120F2DR

TGH40N65F2DS Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGH40N65F2DS

Otros transistores... TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS , TGAN80N60F2DS , TGAN80N65F2DS , IKW50N60T , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 .

History: STGW75M65DF2 | T1800GB45A | TGAN20N135F3D | SPT40N120T1B1 | VS-GB55LA120UX | RJP5001APP-00 | SGP10N60RUF

 

 

 

 

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