TGH40N120F2DR IGBT. Datasheet pdf. Equivalent
Type Designator: TGH40N120F2DR
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 625
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 25
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 18
Collector Capacity (Cc), typ, pF: 94
Total Gate Charge (Qg), typ, nC: 249
Package: TO247
TGH40N120F2DR Transistor Equivalent Substitute - IGBT Cross-Reference Search
TGH40N120F2DR Datasheet (PDF)
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TGH40N120F2DRField Stop Trench IGBTTO-247Features 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationG C EApplicationsUPS, Welder, Inverter, Solar, PTC H
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tgh40n65f2dr.pdf
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TGH40N65F2DRField Stop Trench IGBTTO-247Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationG C EApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTG
tgh40n60f2d.pdf
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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
![TGH40N120F2DR](https://alltransistors.com/images/us.png)
![TGH40N120F2DR](https://alltransistors.com/images/es.png)
![TGH40N120F2DR](https://alltransistors.com/images/ru.png)
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