HCKD5N65AM2 Todos los transistores

 

HCKD5N65AM2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCKD5N65AM2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 69 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 15 nS
   Coesⓘ - Capacitancia de salida, typ: 26.1 pF
   Paquete / Cubierta: TO252
 

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HCKD5N65AM2 Datasheet (PDF)

 ..1. Size:1381K  cn vgsemi
 hckd5n65am2.pdf pdf_icon

HCKD5N65AM2

HCKD5N65AM2@Trench-FS Cool-Watt IGBTHCKD5N65AM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology

 6.1. Size:1380K  cn vgsemi
 hckd5n65bm2.pdf pdf_icon

HCKD5N65AM2

HCKD5N65BM2@Trench-FS Cool-Watt IGBTHCKD5N65BM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology

Otros transistores... TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , IKW50N60T , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH , MSG100T100FLN .

History: MG200Q1US51 | NGTB30N120FL2 | IXST35N120B | STGWT40H65DFB

 

 
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