HCKD5N65AM2 Specs and Replacement
Type Designator: HCKD5N65AM2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 69 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 26.1 pF
Package: TO252
HCKD5N65AM2 Substitution - IGBT ⓘ Cross-Reference Search
HCKD5N65AM2 datasheet
hckd5n65am2.pdf
HCKD5N65AM2 @ Trench-FS Cool-Watt IGBT HCKD5N65AM2 is a 650V5A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V ,high junction temperature and strong robustness. It is very suitable for products with cesat motor and fans driver. Features CoolWatt@ Trench-FS technology ... See More ⇒
hckd5n65bm2.pdf
HCKD5N65BM2 @ Trench-FS Cool-Watt IGBT HCKD5N65BM2 is a 650V5A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V ,high junction temperature and strong robustness. It is very suitable for products with cesat motor and fans driver. Features CoolWatt@ Trench-FS technology ... See More ⇒
Specs: TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , SGH80N60UFD , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH , MSG100T100FLN .
Keywords - HCKD5N65AM2 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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