HCKD5N65AM2 IGBT. Datasheet pdf. Equivalent
Type Designator: HCKD5N65AM2
Type: IGBT + Anti-Parallel Diode
Marking Code: K5M652
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 69
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 10
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 15
Collector Capacity (Cc), typ, pF: 26.1
Total Gate Charge (Qg), typ, nC: 12.5
Package: TO252
HCKD5N65AM2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HCKD5N65AM2 Datasheet (PDF)
hckd5n65am2.pdf
HCKD5N65AM2@Trench-FS Cool-Watt IGBTHCKD5N65AM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology
hckd5n65bm2.pdf
HCKD5N65BM2@Trench-FS Cool-Watt IGBTHCKD5N65BM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: JT075N120GPED
History: JT075N120GPED
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