MSG100D350FH IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG100D350FH
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 162 W
|Vce|ⓘ - Tensión máxima colector-emisor: 330 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 190 pF
Encapsulados: TO247
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MSG100D350FH datasheet
msg100t120fqw.pdf
MSG100T120FQW Features High efficiency in hard switching And resonant topologies 10 sec short circuit withstand Time at Tvj=175 C Low Gate Charge QG Very soft,fast recovery full Current anti-parallel diode Maximum junction temperature T =175 C vjmax Applications UPS Charger Energy Storage Three-level Solar String Inverter Absolute Ratings(
msg100t100fln msg100t100fqw.pdf
MSG100T100FLN/QW Feature Low gate charge Trench FS Technology, saturation voltage V (sat), typ=1.85V@ Ic= CE 100A and TC=25 ROHS product Applications UPS Solar inverter Maximum Ratings Parameter Symbol Rating Unit Collector-emitter voltage V 1000 V CE Tc=25 200 A *DC collector current, limited by T I vjmax C Tc=100 100 A Pulsed collector curr
msg100n350fh.pdf
MSG100N350FH Features High Speed switching Low Saturation Voltage VCE(sat) = 2.2V @ IC = 100 A Built-in Fast Recovery diode RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Colle
Otros transistores... TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , IRGP4066D , MSG100T100FLN , MSG100T100FQW , MSG100T120FQW , MSG15T120FQC , MSG15T120HLC0 , MSG15T65FQT , MSG15T65FQE , MSG20T120FQC .
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