MSG100T100FLN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG100T100FLN
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 790 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 173 nS
Coesⓘ - Capacitancia de salida, typ: 305 pF
Qgⓘ - Carga total de la puerta, typ: 136 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MSG100T100FLN - IGBT
MSG100T100FLN Datasheet (PDF)
msg100t100fln msg100t100fqw.pdf
MSG100T100FLN/QWFeature Low gate charge Trench FS Technology, saturation voltage: V (sat), typ=1.85V@ Ic=CE100A and TC=25 ROHS productApplications UPS Solar inverterMaximum RatingsParameter Symbol Rating UnitCollector-emitter voltage V 1000 VCETc=25 200 A*DC collector current, limited by T Ivjmax CTc=100 100 APulsed collector curr
msg100t120fqw.pdf
MSG100T120FQWFeatures High efficiency in hard switchingAnd resonant topologies 10sec short circuit withstandTime at Tvj=175C Low Gate Charge QG Very soft,fast recovery fullCurrent anti-parallel diode Maximum junction temperatureT =175CvjmaxApplications UPS Charger Energy Storage Three-level Solar String InverterAbsolute Ratings(
msg100t65hlb3 msg100t65hlc1.pdf
MSG100T65HLB3/C1Features Very Low Saturation Voltage:VCE(sat) = 1.65V @ IC = 100 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-Efficient Tight Parameter Distribution High Input ImpedanceApplications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train ApplicationsRequiring High Power Swit
msg100d350fh msg100d350fhs.pdf
MSG100D350FH/FHSFeatures Low gate charge Trench FS Technology Saturation voltage:Vce(sat),typ=2.0,Ic=100Aand Tc=25 RoHS ProductApplications UPS General purpose invertersAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100
msg100n350fh.pdf
MSG100N350FHFeatures High Speed switching Low Saturation Voltage:VCE(sat) = 2.2V @ IC = 100 A Built-in Fast Recovery diode RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Colle
Otros transistores... HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH , GT45F122 , MSG100T100FQW , MSG100T120FQW , MSG15T120FQC , MSG15T120HLC0 , MSG15T65FQT , MSG15T65FQE , MSG20T120FQC , MSG20T65FLE .
Liste
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