Справочник IGBT. MSG100T100FLN

 

MSG100T100FLN - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MSG100T100FLN
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 790 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1000 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 173 nS
   Coesⓘ - Выходная емкость, типовая: 305 pF
   Qgⓘ - Общий заряд затвора, typ: 136 nC
   Тип корпуса: TO247

 Аналог (замена) для MSG100T100FLN

 

 

MSG100T100FLN Datasheet (PDF)

 ..1. Size:6893K  cn maspower
 msg100t100fln msg100t100fqw.pdf

MSG100T100FLN MSG100T100FLN

MSG100T100FLN/QWFeature Low gate charge Trench FS Technology, saturation voltage: V (sat), typ=1.85V@ Ic=CE100A and TC=25 ROHS productApplications UPS Solar inverterMaximum RatingsParameter Symbol Rating UnitCollector-emitter voltage V 1000 VCETc=25 200 A*DC collector current, limited by T Ivjmax CTc=100 100 APulsed collector curr

 6.1. Size:8778K  cn maspower
 msg100t120fqw.pdf

MSG100T100FLN MSG100T100FLN

MSG100T120FQWFeatures High efficiency in hard switchingAnd resonant topologies 10sec short circuit withstandTime at Tvj=175C Low Gate Charge QG Very soft,fast recovery fullCurrent anti-parallel diode Maximum junction temperatureT =175CvjmaxApplications UPS Charger Energy Storage Three-level Solar String InverterAbsolute Ratings(

 7.1. Size:4943K  cn maspower
 msg100t65hlb3 msg100t65hlc1.pdf

MSG100T100FLN MSG100T100FLN

MSG100T65HLB3/C1Features Very Low Saturation Voltage:VCE(sat) = 1.65V @ IC = 100 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-Efficient Tight Parameter Distribution High Input ImpedanceApplications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train ApplicationsRequiring High Power Swit

 8.1. Size:5469K  cn maspower
 msg100d350fh msg100d350fhs.pdf

MSG100T100FLN MSG100T100FLN

MSG100D350FH/FHSFeatures Low gate charge Trench FS Technology Saturation voltage:Vce(sat),typ=2.0,Ic=100Aand Tc=25 RoHS ProductApplications UPS General purpose invertersAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100

 8.2. Size:2543K  cn maspower
 msg100n350fh.pdf

MSG100T100FLN MSG100T100FLN

MSG100N350FHFeatures High Speed switching Low Saturation Voltage:VCE(sat) = 2.2V @ IC = 100 A Built-in Fast Recovery diode RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Colle

Другие IGBT... HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH , GT45F122 , MSG100T100FQW , MSG100T120FQW , MSG15T120FQC , MSG15T120HLC0 , MSG15T65FQT , MSG15T65FQE , MSG20T120FQC , MSG20T65FLE .

 

 
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