MSG25T120FL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG25T120FL
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 298 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.25 V @25℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 99 pF
Encapsulados: TO247
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MSG25T120FL datasheet
msg25t120fl.pdf
MSG25T120FL High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod
msg25t120fpc.pdf
MSG25T120FPC N-Channel IGBT Features Low Gate charge FS Technology VCE(sat) = 1.68V @ IC = 25A High Input Impedance Short circuit withstand time 10 s Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 CES V Gate-emitter voltage V 30 GES T =25 C 50 C Collector curre I C T
msg25t120fqc.pdf
MSG25T120FQC Features Low gate charge FS Technology Saturation voltage VCE(sat),typ= 1.75V @ IC=25A and TC=25 RoHS product Applications General purpose inverters Induction heating(IH) UPS Order Codes Marking Package MSG25T120FQC MSG25T120FQC TO-247 Absolute Ratings Tc=25 Parameter Symbol MSG25T120FQC Unit Collector-Emmiter Voltage Vces 1200
Otros transistores... MSG15T65FQT , MSG15T65FQE , MSG20T120FQC , MSG20T65FLE , MSG20T65FQE , MSG20T65HPC0 , MSG20T65HPE0 , MSG20T65HPT1 , MGD623S , MSG25T120FPC , MSG25T120FQC , MSG30D120FLB , MSG30T65FHS , MSG30T65FHT , MSG30T65FLT , MSG40T120FH , MSG40T120FHW .
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