MSG25T120FL - параметры транзистора, его аналоги, Даташиты

MSG25T120FL Datasheet (PDF)

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MSG25T120FLHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

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MSG25T120FPCN-Channel IGBTFeatures Low Gate charge FS Technology VCE(sat) = 1.68V @ IC = 25A High Input Impedance Short circuit withstand time 10 sApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 30GEST =25C 50CCollector curre ICT

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MSG25T120FQCFeatures Low gate charge FS Technology Saturation voltage:VCE(sat),typ= 1.75V @IC=25A and TC=25 RoHS productApplications General purpose inverters Induction heating(IH) UPSOrder Codes Marking PackageMSG25T120FQC MSG25T120FQC TO-247Absolute RatingsTc=25Parameter Symbol MSG25T120FQC UnitCollector-Emmiter Voltage Vces 1200

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