MSG50N350FQC Todos los transistores

 

MSG50N350FQC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSG50N350FQC
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 328 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 330 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.15 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 81 nS
   Coesⓘ - Capacitancia de salida, typ: 198 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

MSG50N350FQC Datasheet (PDF)

 ..1. Size:6559K  cn maspower
 msg50n350fqc.pdf pdf_icon

MSG50N350FQC

MSG50N350FQCFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 4.1. Size:6593K  1
 msg50n350fh.pdf pdf_icon

MSG50N350FQC

MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 4.2. Size:6593K  cn maspower
 msg50n350fh.pdf pdf_icon

MSG50N350FQC

MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 5.1. Size:5258K  cn maspower
 msg50n350hlc0.pdf pdf_icon

MSG50N350FQC

MSG50N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.55 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 350CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collecto

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APT100GN60LDQ4G | KGT15N120NDS | NGTB15N135IHRWG | IQGB400N60I4 | AOK60B60D1 | XNF6N60T | IXSH30N60A

 

 
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