MSG50N350FQC IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MSG50N350FQC datasheet

..1. Size:6559K cn maspower
msg50n350fqc.pdf pdf_icon

MSG50N350FQC Features High Current Capability Low Saturation Voltage VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collector

4.1. Size:6593K 1
msg50n350fh.pdf pdf_icon

MSG50N350FH Features High Current Capability Low Saturation Voltage VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collector

4.2. Size:6593K cn maspower
msg50n350fh.pdf pdf_icon

5.1. Size:5258K cn maspower
msg50n350hlc0.pdf pdf_icon

MSG50N350HLC0 Features High Current Capability Low Saturation Voltage VCE(sat) = 1.55 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 350 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collecto

Otros transistores... MSG40T120FHW , MSG40T120FL , MSG40T120FQC , MSG40T65FFC , MSG40T65FH , MSG40T65FHC , MSG40T65HPC0 , MSG40T65HPE0 , GT30F125 , MSG50N350HLC0 , MSG50T120FHW , MSG50T65FHC , MSG50T65FQC , MSG60T120FQW , MSG60T65FHC , MSG60T65HHC0 , MSG75C65HHC0 .