All IGBT. MSG50N350FQC Datasheet

 

MSG50N350FQC IGBT. Datasheet pdf. Equivalent


   Type Designator: MSG50N350FQC
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 328 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 81 nS
   Coesⓘ - Output Capacitance, typ: 198 pF
   Qgⓘ - Total Gate Charge, typ: 175 nC
   Package: TO247

 MSG50N350FQC Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSG50N350FQC Datasheet (PDF)

 ..1. Size:6559K  cn maspower
 msg50n350fqc.pdf

MSG50N350FQC MSG50N350FQC

MSG50N350FQCFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 4.1. Size:6593K  1
 msg50n350fh.pdf

MSG50N350FQC MSG50N350FQC

MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 4.2. Size:6593K  cn maspower
 msg50n350fh.pdf

MSG50N350FQC MSG50N350FQC

MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 5.1. Size:5258K  cn maspower
 msg50n350hlc0.pdf

MSG50N350FQC MSG50N350FQC

MSG50N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.55 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 350CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collecto

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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