All IGBT. MSG50N350FQC Datasheet

 

MSG50N350FQC IGBT. Datasheet pdf. Equivalent


   Type Designator: MSG50N350FQC
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 328
   Maximum Collector-Emitter Voltage |Vce|, V: 330
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.15
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 81
   Collector Capacity (Cc), typ, pF: 198
   Total Gate Charge (Qg), typ, nC: 175
   Package: TO247

 MSG50N350FQC Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSG50N350FQC Datasheet (PDF)

 ..1. Size:6559K  cn maspower
 msg50n350fqc.pdf

MSG50N350FQC MSG50N350FQC

MSG50N350FQCFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 4.1. Size:6593K  1
 msg50n350fh.pdf

MSG50N350FQC MSG50N350FQC

MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 4.2. Size:6593K  cn maspower
 msg50n350fh.pdf

MSG50N350FQC MSG50N350FQC

MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 5.1. Size:5258K  cn maspower
 msg50n350hlc0.pdf

MSG50N350FQC MSG50N350FQC

MSG50N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.55 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 350CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collecto

Datasheet: MSG40T120FHW , MSG40T120FL , MSG40T120FQC , MSG40T65FFC , MSG40T65FH , MSG40T65FHC , MSG40T65HPC0 , MSG40T65HPE0 , CRG60T60AK3HD , MSG50N350HLC0 , MSG50T120FHW , MSG50T65FHC , MSG50T65FQC , MSG60T120FQW , MSG60T65FHC , MSG60T65HHC0 , MSG75C65HHC0 .

 

 
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