MSG50N350HLC0 Todos los transistores

 

MSG50N350HLC0 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSG50N350HLC0

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 302 W

|Vce|ⓘ - Tensión máxima colector-emisor: 350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 93 nS

Coesⓘ - Capacitancia de salida, typ: 2188 pF

Encapsulados: TO247

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MSG50N350HLC0 datasheet

 ..1. Size:5258K  cn maspower
msg50n350hlc0.pdf pdf_icon

MSG50N350HLC0

MSG50N350HLC0 Features High Current Capability Low Saturation Voltage VCE(sat) = 1.55 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 350 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collecto

 5.1. Size:6593K  1
msg50n350fh.pdf pdf_icon

MSG50N350HLC0

MSG50N350FH Features High Current Capability Low Saturation Voltage VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collector

 5.2. Size:6559K  cn maspower
msg50n350fqc.pdf pdf_icon

MSG50N350HLC0

MSG50N350FQC Features High Current Capability Low Saturation Voltage VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collector

 5.3. Size:6593K  cn maspower
msg50n350fh.pdf pdf_icon

MSG50N350HLC0

MSG50N350FH Features High Current Capability Low Saturation Voltage VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collector

Otros transistores... MSG40T120FL , MSG40T120FQC , MSG40T65FFC , MSG40T65FH , MSG40T65FHC , MSG40T65HPC0 , MSG40T65HPE0 , MSG50N350FQC , IXRH40N120 , MSG50T120FHW , MSG50T65FHC , MSG50T65FQC , MSG60T120FQW , MSG60T65FHC , MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 .

History: SGT30T60SD3PU | MSG75C65HHC0

 

 

 


History: SGT30T60SD3PU | MSG75C65HHC0

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