MSG50T65FHC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG50T65FHC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 437 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 100 nS
Coesⓘ - Capacitancia de salida, typ: 283 pF
Qgⓘ - Carga total de la puerta, typ: 121 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MSG50T65FHC - IGBT
MSG50T65FHC Datasheet (PDF)
msg50t65fhc.pdf
MSG50T65FHCFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.6V,I =50A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V100 AIc T=25*Collector Current-continuousT=10050 ACollector Curre
msg50t65fqc.pdf
MSG50T65FQCN-Channel IGBTFeatures Low gate charge Trench FS Technology Saturation voltage:VCE(sat),typ=1.6V@IC=50A and TC=25Applications General purpose inverter UPSAbsolute Ratings(Tc=25)ValueParameter Symbol UnitMSG50N65FQCCollector-Emmiter Voltage V 650 VceIC 100 A*Collector Current-continuous T=25T=10050 AIF100 ADiod
msg50t120fhw.pdf
MSG50T120FHW1200V Field stop Trench IGBTFeatures High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 50A High Input ImpedanceApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 20GEST =25C 100CCollector curre ICT
msg50t120fqw.pdf
MSG50T120FQWFeatures Extremely Efficient Trench with FieldStop Technology TJmax =175C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10s Short Circuit CapabilityApplications Solar Inverter UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VCES100 AIc T=25Collector Curren
Otros transistores... MSG40T65FFC , MSG40T65FH , MSG40T65FHC , MSG40T65HPC0 , MSG40T65HPE0 , MSG50N350FQC , MSG50N350HLC0 , MSG50T120FHW , FGPF4533 , MSG50T65FQC , MSG60T120FQW , MSG60T65FHC , MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , MSG80N350FH .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2