MSG60T65FHC IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG60T65FHC
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
trⓘ - Tiempo de subida, typ: 79 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Encapsulados: TO247
Búsqueda de reemplazo de MSG60T65FHC IGBT
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MSG60T65FHC datasheet
msg60t65fhc.pdf
MSG60T65FHC Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage VCE(sat),typ= 1.85V @ IC=60A and TC=25 Applications General purpose inverters Induction heating(IH) Welding Converters UPS Absolute Ratings Tc=25 Parameter Symbol MSG25T120FLC Unit Collector-Emmiter Voltage Vces 650 V 120 A Ic T=25 Co
msg60t65hhc0.pdf
MSG60T65HHC0 Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage VCE(sat),typ= 1.5V @ IC=50A and TC=25 Applications General purpose inverters Induction heating(IH) Welding Converters UPS Absolute Ratings Tc=25 Parameter Symbol MSG25T120FLC Unit Collector-Emmiter Voltage Vces 650 V 120 A Ic T=25 Co
msg60t120fqw.pdf
MSG60T120FQW Features High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 60A Tj=25 100% avalanche tested Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 CES V Gate-emitter voltage V 20 GES T =25 C 120 C Collector curre I C T =100 C 60 C A Pu
Otros transistores... MSG40T65HPC0 , MSG40T65HPE0 , MSG50N350FQC , MSG50N350HLC0 , MSG50T120FHW , MSG50T65FHC , MSG50T65FQC , MSG60T120FQW , GT30J122 , MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , MSG80N350FH , MSG80N350FL , MSG80N350FQC , MSG80N350HLC0 .
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