MSG60T65FHC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG60T65FHC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 79 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Qgⓘ - Carga total de la puerta, typ: 158 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MSG60T65FHC - IGBT
MSG60T65FHC Datasheet (PDF)
msg60t65fhc.pdf
MSG60T65FHCFeatures Low gate charge Trench-Stop Technology High speed switching Saturation voltage:VCE(sat),typ= 1.85V @IC=60A and TC=25Applications General purpose inverters Induction heating(IH) Welding Converters UPSAbsolute RatingsTc=25Parameter Symbol MSG25T120FLC UnitCollector-Emmiter Voltage Vces 650 V120 AIc T=25Co
msg60t65hhc0.pdf
MSG60T65HHC0Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage:VCE(sat),typ= 1.5V @IC=50A and TC=25Applications General purpose inverters Induction heating(IH) Welding Converters UPSAbsolute RatingsTc=25Parameter Symbol MSG25T120FLC UnitCollector-Emmiter Voltage Vces 650 V120 AIc T=25Co
msg60t120fqw.pdf
MSG60T120FQWFeatures High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 60A Tj=25 100% avalanche testedApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 20GEST =25C 120CCollector curre ICT =100C 60CAPu
Otros transistores... MSG40T65HPC0 , MSG40T65HPE0 , MSG50N350FQC , MSG50N350HLC0 , MSG50T120FHW , MSG50T65FHC , MSG50T65FQC , MSG60T120FQW , IHW20N120R2 , MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , MSG80N350FH , MSG80N350FL , MSG80N350FQC , MSG80N350HLC0 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2