MSG60T65FHC Specs and Replacement
Type Designator: MSG60T65FHC
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 79 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO247
MSG60T65FHC Substitution - IGBT ⓘ Cross-Reference Search
MSG60T65FHC datasheet
msg60t65fhc.pdf
MSG60T65FHC Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage VCE(sat),typ= 1.85V @ IC=60A and TC=25 Applications General purpose inverters Induction heating(IH) Welding Converters UPS Absolute Ratings Tc=25 Parameter Symbol MSG25T120FLC Unit Collector-Emmiter Voltage Vces 650 V 120 A Ic T=25 Co... See More ⇒
msg60t65hhc0.pdf
MSG60T65HHC0 Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage VCE(sat),typ= 1.5V @ IC=50A and TC=25 Applications General purpose inverters Induction heating(IH) Welding Converters UPS Absolute Ratings Tc=25 Parameter Symbol MSG25T120FLC Unit Collector-Emmiter Voltage Vces 650 V 120 A Ic T=25 Co... See More ⇒
msg60t120fqw.pdf
MSG60T120FQW Features High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 60A Tj=25 100% avalanche tested Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 CES V Gate-emitter voltage V 20 GES T =25 C 120 C Collector curre I C T =100 C 60 C A Pu... See More ⇒
Specs: MSG40T65HPC0 , MSG40T65HPE0 , MSG50N350FQC , MSG50N350HLC0 , MSG50T120FHW , MSG50T65FHC , MSG50T65FQC , MSG60T120FQW , GT30J122 , MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , MSG80N350FH , MSG80N350FL , MSG80N350FQC , MSG80N350HLC0 .
Keywords - MSG60T65FHC transistor spec
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