MSG80N350FL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MSG80N350FL datasheet

..1. Size:6611K cn maspower
msg80n350fl.pdf pdf_icon

MSG80N350FL Features High Current Capability Low Saturation Voltage VCE(sat) = 1.19 V @ IC = 80 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 180 C Collector Current I C T =100 80 A C Pulsed Collector

4.1. Size:6853K cn maspower
msg80n350fqc.pdf pdf_icon

MSG80N350FQC Features Fast switching Low Saturation Voltage VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 180 C Collector Current I C T =100 80 A C Pulsed Collector Current T

4.2. Size:6662K cn maspower
msg80n350fh.pdf pdf_icon

MSG80N350FH Features Fast switching Low Saturation Voltage VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 180 C Collector Current I C T =100 80 A C Pulsed Collector Current TC

5.1. Size:5161K cn maspower
msg80n350hlc0.pdf pdf_icon

MSG80N350HLC0 Features High Current Capability Low Saturation Voltage VCE(sat) = 1.3V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 180 C Collector Current I C T =100 80 A C Pulsed Collector

Otros transistores... MSG50T65FQC , MSG60T120FQW , MSG60T65FHC , MSG60T65HHC0 , MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , MSG80N350FH , IRGP4062D , MSG80N350FQC , MSG80N350HLC0 , MSG80N60FQC , HGTP12N60C3DR , JNG15T60FS , JNG15N120AI , JNG15N120HS2 , JNG15T120AI .