IXGH32N60BU1 Todos los transistores

 

IXGH32N60BU1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH32N60BU1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 270 pF
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de IXGH32N60BU1 - IGBT

 

Principales características: IXGH32N60BU1

 ..1. Size:137K  ixys
 ixgh32n60bu1.pdf pdf_icon

IXGH32N60BU1

IXGH 32N60BU1 VCES = 600 V HiPerFASTTM IGBT IC25 = 60 A with Diode VCE(sat) = 2.3 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C60 A E = Emitter, TAB = Collector IC90 TC = 90 C32 A IC

 4.1. Size:125K  ixys
 ixgh32n60bd1.pdf pdf_icon

IXGH32N60BU1

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25 C to 150 C 600 V E C VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) VGES Continuous 20 V TO-247 AD VGEM Transient 30 V (IXGH) IC25 TC = 25 C60 A IC90 TC = 90 C3

 4.2. Size:34K  ixys
 ixgh32n60b.pdf pdf_icon

IXGH32N60BU1

HiPerFASTTM IGBT IXGH32N60B VCES = 600 V IC25 = 60 A VCE(sat) = 2.5 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C IC25 TC = 25 C60 A E IC90 TC = 90 C32 A G = Gate, C = Collector, ICM TC = 25 C, 1 ms 120 A E = Emitter, TAB = Col

 5.1. Size:48K  ixys
 ixgh32n60au1 ixgh32n60au1s.pdf pdf_icon

IXGH32N60BU1

IXGH 32N60AU1 IXGH 32N60AU1S VCES = 600 V IC25 = 60 A HiPerFASTTM IGBT with Diode VCE(sat) = 2.9V Combi Pack tfi = 125 ns TO-247 SMD (32N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C (TAB) E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A IC90 TC = 90 C32 A C (TAB)

MOSTRAR MÁS

Otros transistores... IXGH31N60 , IXGH31N60D1 , IXGH32N50B , IXGH32N50BU1 , IXGH32N60A , IXGH32N60AU1 , IXGH32N60B , IXGH32N60BD1 , SGT60U65FD1PT , IXGH32N60C , IXGH32N60CD1 , IXGH38N60 , IXGH39N60B , IXGH39N60BD1 , IXGH39N60BS , IXGH40N30 , IXGH40N30S .

 

 
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