IXGH32N60BU1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IXGH32N60BU1
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 200 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.3(max) V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 20 nS
Coesⓘ - Выходная емкость, типовая: 270 pF
Тип корпуса: TO247
Аналог (замена) для IXGH32N60BU1
IXGH32N60BU1 Datasheet (PDF)
ixgh32n60bu1.pdf
IXGH 32N60BU1 VCES = 600 VHiPerFASTTM IGBTIC25 = 60 Awith DiodeVCE(sat) = 2.3 Vtfi = 80 nsSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EG = Gate, C = Collector,IC25 TC = 25C60 AE = Emitter, TAB = CollectorIC90 TC = 90C32 AIC
ixgh32n60bd1.pdf
IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3
ixgh32n60b.pdf
HiPerFASTTM IGBT IXGH32N60B VCES = 600 VIC25 = 60 AVCE(sat) = 2.5 Vtfi = 80 nsSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C60 A EIC90 TC = 90C32 AG = Gate, C = Collector,ICM TC = 25C, 1 ms 120 AE = Emitter, TAB = Col
ixgh32n60au1 ixgh32n60au1s.pdf
IXGH 32N60AU1IXGH 32N60AU1SVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTwith Diode VCE(sat) = 2.9VCombi Packtfi = 125 nsTO-247 SMD(32N60AU1S)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGC (TAB)EVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)
ixgh32n60a.pdf
IXGH 32N60AIXGH 32N60ASVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTVCE(sat) = 2.9 Vtfi = 125 nsTO-247 SMD(32N60AS)Symbol Test Conditions Maximum RatingsC (TAB)VCES TJ = 25C to 150C 600 V GEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)GICM TC = 25C, 1 ms 120
ixgh32n60c.pdf
IXGH 32N60C VCES = 600 VHiPerFASTTM IGBTIXGT 32N60C IC25 = 60 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 55 nsTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD (IXGH)IC110 TC = 110C32 AICM TC =
ixgh32n60cd1.pdf
IXGH 32N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 32N60CD1 IC25 = 60 Awith DiodeVCE(SAT)typ = 2.1 Vtfi(typ) = 55 nsLight Speed SeriesTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGVGES Continuous 20 VC (TAB)CVGEM Transient 30 V EIC25 TC = 25C60 AIC90 TC = 90C32 ATO-268 (D
ixgh32n60as.pdf
IXGH 32N60AIXGH 32N60ASVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTVCE(sat) = 2.9 Vtfi = 125 nsTO-247 SMD(32N60AS)Symbol Test Conditions Maximum RatingsC (TAB)VCES TJ = 25C to 150C 600 V GEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)GICM TC = 25C, 1 ms 120
Другие IGBT... IXGH31N60 , IXGH31N60D1 , IXGH32N50B , IXGH32N50BU1 , IXGH32N60A , IXGH32N60AU1 , IXGH32N60B , IXGH32N60BD1 , GT45F122 , IXGH32N60C , IXGH32N60CD1 , IXGH38N60 , IXGH39N60B , IXGH39N60BD1 , IXGH39N60BS , IXGH40N30 , IXGH40N30S .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2