CRG40T60AK3SD Todos los transistores

 

CRG40T60AK3SD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CRG40T60AK3SD
   Tipo de transistor: IGBT + Diode
   Código de marcado: G40T60AK3SD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 280
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
   Tensión máxima de puerta-umbral |VGE(th)|, V: 7
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 60
   Capacitancia de salida (Cc), typ, pF: 170
   Carga total de la puerta (Qg), typ, nC: 165
   Paquete / Cubierta: TO247

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CRG40T60AK3SD Datasheet (PDF)

 ..1. Size:998K  wuxi china
crg40t60ak3sd.pdf

CRG40T60AK3SD
CRG40T60AK3SD

CRG40T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.7 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low sat

 3.1. Size:1182K  crhj
crg40t60an3hd crg40t60ak3hd.pdf

CRG40T60AK3SD
CRG40T60AK3SD

CRG40T60AN3HD, CRG40T60AK3HD CRG40T60AN3HD CRG40T60AK3HD VCES 600 V FS IGBT IC 40 A RoHS Ptot TC=25 336 W VCE(sat) 1.9 V TO-3PN FS

 3.2. Size:1086K  wuxi china
crg40t60ak3hd.pdf

CRG40T60AK3SD
CRG40T60AK3SD

Silicon FS Trench IGBT CRG40T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 336 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

 3.3. Size:1116K  wuxi china
crg40t60ak3h.pdf

CRG40T60AK3SD
CRG40T60AK3SD

Silicon FS Trench IGBT CRG40T60AK3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO- 247 Features FS Trench Technology, Positive temperature coefficient Low saturati

Otros transistores... CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S , CRG30T60AK3HD , CRG40T60AK3H , GT60N321 , CRG50T60AK3HD , CRG60T60AK3H , CRG60T60AK3SD , SRE100N065FSU , SRE100N065FSU2D6 , SRE100N065FSUD6 , SRE100N065FSUD8 , SRE100N120FSUDA .

 

 
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