SRE60N065FSU Todos los transistores

 

SRE60N065FSU - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRE60N065FSU
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 306 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 73 nS
   Coesⓘ - Capacitancia de salida, typ: 220 pF
   Qgⓘ - Carga total de la puerta, typ: 90 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

SRE60N065FSU Datasheet (PDF)

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SRE60N065FSU

Datasheet 60A 650V Trench Fieldstop IGBT SRE60N065FSU General Description Symbol The SRE60N065FSU is a Field Stop Trench CIGBT, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE60N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE60N065

 0.1. Size:895K  sanrise-tech
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SRE60N065FSU

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6 General Description Symbol The SRE60N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUD6 package is TO-247. Figure 1 Symbol of SRE60N

 0.2. Size:1144K  sanrise-tech
sre60n065fsu2s8.pdf pdf_icon

SRE60N065FSU

Datasheet 60A 650V Trench Fieldstop IGBT with SiC SBD SRE60N065FSU2S8 General Description Symbol The SRE60N065FSU2S8 is a Field Stop Trench IGBT with SiC SBD, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSU2S8 package is TO-247. Figure 1 Symbol of SRE60N065FSU2S8 Features

 0.3. Size:546K  sanrise-tech
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SRE60N065FSU

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUDG General Description Symbol The SRE60N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUDG package is TO-247. Figure 1 Symbol of SRE60N06

Otros transistores... SRE40N065FSUR , SRE50N065FSU , SRE50N065FSUD6 , SRE50N120FSUD9 , SRE50N120FSUDAT , SRE50N120FSUDATP , SRE50N120FSUS7T , SRE50N120FSUS7T4 , RJP30H2A , SRE60N065FSU2S8 , SRE60N065FSUD6 , SRE60N065FSUDG , SRE60N120FSSDAT , SRE60N120FSSDATP , SRE75N065FSU2DH , SRE75N065FSUD6 , SRE80N065FSU .

History: SRE40N065FSUDG | HM25N120T | IKW15N120H3

 

 
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