SRE60N065FSU - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: SRE60N065FSU
Тип транзистора: IGBT
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 306
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 100
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.45
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
Максимальная температура перехода (Tj), ℃: 175
Время нарастания типовое (tr), nS: 73
Емкость коллектора типовая (Cc), pf: 220
Общий заряд затвора (Qg), typ, nC: 90
Тип корпуса: TO247
Аналог (замена) для SRE60N065FSU
SRE60N065FSU Datasheet (PDF)
sre60n065fsu.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 60A 650V Trench Fieldstop IGBT SRE60N065FSU General Description Symbol The SRE60N065FSU is a Field Stop Trench CIGBT, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE60N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE60N065
sre60n065fsud6.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6 General Description Symbol The SRE60N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUD6 package is TO-247. Figure 1 Symbol of SRE60N
sre60n065fsu2s8.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 60A 650V Trench Fieldstop IGBT with SiC SBD SRE60N065FSU2S8 General Description Symbol The SRE60N065FSU2S8 is a Field Stop Trench IGBT with SiC SBD, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSU2S8 package is TO-247. Figure 1 Symbol of SRE60N065FSU2S8 Features
sre60n065fsudg.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUDG General Description Symbol The SRE60N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUDG package is TO-247. Figure 1 Symbol of SRE60N06
Другие IGBT... SRE40N065FSUR , SRE50N065FSU , SRE50N065FSUD6 , SRE50N120FSUD9 , SRE50N120FSUDAT , SRE50N120FSUDATP , SRE50N120FSUS7T , SRE50N120FSUS7T4 , FGD4536 , SRE60N065FSU2S8 , SRE60N065FSUD6 , SRE60N065FSUDG , SRE60N120FSSDAT , SRE60N120FSSDATP , SRE75N065FSU2DH , SRE75N065FSUD6 , SRE80N065FSU .
![SRE60N065FSU](https://alltransistors.com/images/us.png)
![SRE60N065FSU](https://alltransistors.com/images/es.png)
![SRE60N065FSU](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ