SRE60N065FSU2S8 Todos los transistores

 

SRE60N065FSU2S8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRE60N065FSU2S8
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 306
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 100
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.51
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 42
   Capacitancia de salida (Cc), typ, pF: 220
   Carga total de la puerta (Qg), typ, nC: 190
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de SRE60N065FSU2S8 - IGBT

 

SRE60N065FSU2S8 Datasheet (PDF)

 0.1. Size:1144K  sanrise-tech
sre60n065fsu2s8.pdf

SRE60N065FSU2S8
SRE60N065FSU2S8

Datasheet 60A 650V Trench Fieldstop IGBT with SiC SBD SRE60N065FSU2S8 General Description Symbol The SRE60N065FSU2S8 is a Field Stop Trench IGBT with SiC SBD, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSU2S8 package is TO-247. Figure 1 Symbol of SRE60N065FSU2S8 Features

 2.1. Size:895K  sanrise-tech
sre60n065fsud6.pdf

SRE60N065FSU2S8
SRE60N065FSU2S8

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6 General Description Symbol The SRE60N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUD6 package is TO-247. Figure 1 Symbol of SRE60N

 2.2. Size:546K  sanrise-tech
sre60n065fsudg.pdf

SRE60N065FSU2S8
SRE60N065FSU2S8

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUDG General Description Symbol The SRE60N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUDG package is TO-247. Figure 1 Symbol of SRE60N06

 2.3. Size:897K  sanrise-tech
sre60n065fsu.pdf

SRE60N065FSU2S8
SRE60N065FSU2S8

Datasheet 60A 650V Trench Fieldstop IGBT SRE60N065FSU General Description Symbol The SRE60N065FSU is a Field Stop Trench CIGBT, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE60N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE60N065

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: STGB3HF60HD | SRE15N060FSUDE

 

 
Back to Top

 


History: STGB3HF60HD | SRE15N060FSUDE

SRE60N065FSU2S8
  SRE60N065FSU2S8
  SRE60N065FSU2S8
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
Back to Top