Справочник IGBT. SRE60N065FSU2S8

 

SRE60N065FSU2S8 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SRE60N065FSU2S8
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 306
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 100
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.51
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 42
   Емкость коллектора типовая (Cc), pf: 220
   Общий заряд затвора (Qg), typ, nC: 190
   Тип корпуса: TO247

 Аналог (замена) для SRE60N065FSU2S8

 

 

SRE60N065FSU2S8 Datasheet (PDF)

 0.1. Size:1144K  sanrise-tech
 sre60n065fsu2s8.pdf

SRE60N065FSU2S8 SRE60N065FSU2S8

Datasheet 60A 650V Trench Fieldstop IGBT with SiC SBD SRE60N065FSU2S8 General Description Symbol The SRE60N065FSU2S8 is a Field Stop Trench IGBT with SiC SBD, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSU2S8 package is TO-247. Figure 1 Symbol of SRE60N065FSU2S8 Features

 2.1. Size:895K  sanrise-tech
 sre60n065fsud6.pdf

SRE60N065FSU2S8 SRE60N065FSU2S8

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6 General Description Symbol The SRE60N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUD6 package is TO-247. Figure 1 Symbol of SRE60N

 2.2. Size:546K  sanrise-tech
 sre60n065fsudg.pdf

SRE60N065FSU2S8 SRE60N065FSU2S8

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUDG General Description Symbol The SRE60N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUDG package is TO-247. Figure 1 Symbol of SRE60N06

 2.3. Size:897K  sanrise-tech
 sre60n065fsu.pdf

SRE60N065FSU2S8 SRE60N065FSU2S8

Datasheet 60A 650V Trench Fieldstop IGBT SRE60N065FSU General Description Symbol The SRE60N065FSU is a Field Stop Trench CIGBT, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE60N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE60N065

Другие IGBT... SRE50N065FSU , SRE50N065FSUD6 , SRE50N120FSUD9 , SRE50N120FSUDAT , SRE50N120FSUDATP , SRE50N120FSUS7T , SRE50N120FSUS7T4 , SRE60N065FSU , RJP30H2A , SRE60N065FSUD6 , SRE60N065FSUDG , SRE60N120FSSDAT , SRE60N120FSSDATP , SRE75N065FSU2DH , SRE75N065FSUD6 , SRE80N065FSU , SRE80N065FSU2 .

 

 
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