SRE60N120FSSDAT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRE60N120FSSDAT
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.3 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 61 nS
Coesⓘ - Capacitancia de salida, typ: 257 pF
Qgⓘ - Carga total de la puerta, typ: 131 nC
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
SRE60N120FSSDAT Datasheet (PDF)
sre60n120fssda.pdf

Datasheet 60A 1200V Trench Fieldstop IGBT with anti-parallel diode SRE60N120FSSDA General Description Symbol TheSRE60N120FSSDA is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. The SRE60N120FSSDA is available in TO-247
sre60n065fsud6.pdf

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6 General Description Symbol The SRE60N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUD6 package is TO-247. Figure 1 Symbol of SRE60N
sre60n065fsu2s8.pdf

Datasheet 60A 650V Trench Fieldstop IGBT with SiC SBD SRE60N065FSU2S8 General Description Symbol The SRE60N065FSU2S8 is a Field Stop Trench IGBT with SiC SBD, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSU2S8 package is TO-247. Figure 1 Symbol of SRE60N065FSU2S8 Features
sre60n065fsudg.pdf

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUDG General Description Symbol The SRE60N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUDG package is TO-247. Figure 1 Symbol of SRE60N06
Otros transistores... SRE50N120FSUDAT , SRE50N120FSUDATP , SRE50N120FSUS7T , SRE50N120FSUS7T4 , SRE60N065FSU , SRE60N065FSU2S8 , SRE60N065FSUD6 , SRE60N065FSUDG , FGH60N60SMD , SRE60N120FSSDATP , SRE75N065FSU2DH , SRE75N065FSUD6 , SRE80N065FSU , SRE80N065FSU2 , SRE80N065FSU2DB , SRE80N065FSUD6 , SRE80N065FSUD8 .
History: IXGH32N60BU1 | OST30N65HMF | IRGP4069 | OST20N135HRF | IRGS4056D
History: IXGH32N60BU1 | OST30N65HMF | IRGP4069 | OST20N135HRF | IRGS4056D



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
mp10b transistor | bc182b | 2n3054 transistor equivalent | 2n554 | 2sa1011 | 2sa1283 | 2sb646 | 2sc1885 datasheet