SRE60N120FSSDAT Todos los transistores

 

SRE60N120FSSDAT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRE60N120FSSDAT
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.3 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 61 nS
   Coesⓘ - Capacitancia de salida, typ: 257 pF
   Qgⓘ - Carga total de la puerta, typ: 131 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

SRE60N120FSSDAT Datasheet (PDF)

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SRE60N120FSSDAT

Datasheet 60A 1200V Trench Fieldstop IGBT with anti-parallel diode SRE60N120FSSDA General Description Symbol TheSRE60N120FSSDA is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. The SRE60N120FSSDA is available in TO-247

 8.1. Size:895K  sanrise-tech
sre60n065fsud6.pdf pdf_icon

SRE60N120FSSDAT

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6 General Description Symbol The SRE60N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUD6 package is TO-247. Figure 1 Symbol of SRE60N

 8.2. Size:1144K  sanrise-tech
sre60n065fsu2s8.pdf pdf_icon

SRE60N120FSSDAT

Datasheet 60A 650V Trench Fieldstop IGBT with SiC SBD SRE60N065FSU2S8 General Description Symbol The SRE60N065FSU2S8 is a Field Stop Trench IGBT with SiC SBD, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSU2S8 package is TO-247. Figure 1 Symbol of SRE60N065FSU2S8 Features

 8.3. Size:546K  sanrise-tech
sre60n065fsudg.pdf pdf_icon

SRE60N120FSSDAT

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUDG General Description Symbol The SRE60N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUDG package is TO-247. Figure 1 Symbol of SRE60N06

Otros transistores... SRE50N120FSUDAT , SRE50N120FSUDATP , SRE50N120FSUS7T , SRE50N120FSUS7T4 , SRE60N065FSU , SRE60N065FSU2S8 , SRE60N065FSUD6 , SRE60N065FSUDG , FGH60N60SMD , SRE60N120FSSDATP , SRE75N065FSU2DH , SRE75N065FSUD6 , SRE80N065FSU , SRE80N065FSU2 , SRE80N065FSU2DB , SRE80N065FSUD6 , SRE80N065FSUD8 .

History: IXGH32N60BU1 | OST30N65HMF | IRGP4069 | OST20N135HRF | IRGS4056D

 

 
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