SRE60N120FSSDAT IGBT. Datasheet pdf. Equivalent
Type Designator: SRE60N120FSSDAT
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 500
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 100
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 61
Collector Capacity (Cc), typ, pF: 257
Total Gate Charge (Qg), typ, nC: 131
Package: TO247
SRE60N120FSSDAT Transistor Equivalent Substitute - IGBT Cross-Reference Search
SRE60N120FSSDAT Datasheet (PDF)
sre60n120fssda.pdf
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Datasheet 60A 1200V Trench Fieldstop IGBT with anti-parallel diode SRE60N120FSSDA General Description Symbol TheSRE60N120FSSDA is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. The SRE60N120FSSDA is available in TO-247
sre60n065fsud6.pdf
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Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6 General Description Symbol The SRE60N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUD6 package is TO-247. Figure 1 Symbol of SRE60N
sre60n065fsu2s8.pdf
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Datasheet 60A 650V Trench Fieldstop IGBT with SiC SBD SRE60N065FSU2S8 General Description Symbol The SRE60N065FSU2S8 is a Field Stop Trench IGBT with SiC SBD, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSU2S8 package is TO-247. Figure 1 Symbol of SRE60N065FSU2S8 Features
sre60n065fsudg.pdf
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Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUDG General Description Symbol The SRE60N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUDG package is TO-247. Figure 1 Symbol of SRE60N06
sre60n065fsu.pdf
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Datasheet 60A 650V Trench Fieldstop IGBT SRE60N065FSU General Description Symbol The SRE60N065FSU is a Field Stop Trench CIGBT, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE60N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE60N065
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
![SRE60N120FSSDAT](https://alltransistors.com/images/us.png)
![SRE60N120FSSDAT](https://alltransistors.com/images/es.png)
![SRE60N120FSSDAT](https://alltransistors.com/images/ru.png)
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