SRE75N065FSUD6 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRE75N065FSUD6
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 306 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 73 nS
Coesⓘ - Capacitancia de salida, typ: 220 pF
Qgⓘ - Carga total de la puerta, typ: 90 nC
Paquete / Cubierta: TO247
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SRE75N065FSUD6 Datasheet (PDF)
sre75n065fsud6.pdf
Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSUD6 General Description Symbol The SRE75N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE75N065FSUD6 package is TO-247. Figure 1 Symbol of SRE75N
sre75n065fsu2dh.pdf
Preliminary Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSU2DH General Description Symbol The SRE75N065FSU2DH is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE7565FSU2DH package is TO-247. Features F
Otros transistores... SRE50N120FSUS7T4 , SRE60N065FSU , SRE60N065FSU2S8 , SRE60N065FSUD6 , SRE60N065FSUDG , SRE60N120FSSDAT , SRE60N120FSSDATP , SRE75N065FSU2DH , IXGH60N60 , SRE80N065FSU , SRE80N065FSU2 , SRE80N065FSU2DB , SRE80N065FSUD6 , SRE80N065FSUD8 , OST80N65HMF , HCKW75N65GH2 , HCKZ75N65GH2 .
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