All IGBT. SRE75N065FSUD6 Datasheet

 

SRE75N065FSUD6 IGBT. Datasheet pdf. Equivalent


   Type Designator: SRE75N065FSUD6
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 306 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 73 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Qgⓘ - Total Gate Charge, typ: 90 nC
   Package: TO247

 SRE75N065FSUD6 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SRE75N065FSUD6 Datasheet (PDF)

 ..1. Size:852K  sanrise-tech
sre75n065fsud6.pdf

SRE75N065FSUD6
SRE75N065FSUD6

Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSUD6 General Description Symbol The SRE75N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE75N065FSUD6 package is TO-247. Figure 1 Symbol of SRE75N

 2.1. Size:1068K  sanrise-tech
sre75n065fsu2dh.pdf

SRE75N065FSUD6
SRE75N065FSUD6

Preliminary Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSU2DH General Description Symbol The SRE75N065FSU2DH is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE7565FSU2DH package is TO-247. Features F

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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