SRE75N065FSUD6 PDF and Equivalents Search

 

SRE75N065FSUD6 Specs and Replacement

Type Designator: SRE75N065FSUD6

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 306 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 73 nS

Coesⓘ - Output Capacitance, typ: 220 pF

Package: TO247

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SRE75N065FSUD6 datasheet

 ..1. Size:852K  sanrise-tech
sre75n065fsud6.pdf pdf_icon

SRE75N065FSUD6

Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSUD6 General Description Symbol The SRE75N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE75N065FSUD6 package is TO-247. Figure 1 Symbol of SRE75N... See More ⇒

 2.1. Size:1068K  sanrise-tech
sre75n065fsu2dh.pdf pdf_icon

SRE75N065FSUD6

Preliminary Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSU2DH General Description Symbol The SRE75N065FSU2DH is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE7565FSU2DH package is TO-247. Features F... See More ⇒

Specs: SRE50N120FSUS7T4 , SRE60N065FSU , SRE60N065FSU2S8 , SRE60N065FSUD6 , SRE60N065FSUDG , SRE60N120FSSDAT , SRE60N120FSSDATP , SRE75N065FSU2DH , CRG40T60AN3H , SRE80N065FSU , SRE80N065FSU2 , SRE80N065FSU2DB , SRE80N065FSUD6 , SRE80N065FSUD8 , OST80N65HMF , HCKW75N65GH2 , HCKZ75N65GH2 .

History: RJH60D2DPP-M0 | SRE50N120FSUDATP

Keywords - SRE75N065FSUD6 transistor spec

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History: RJH60D2DPP-M0 | SRE50N120FSUDATP

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