SRE80N065FSU2DB Todos los transistores

 

SRE80N065FSU2DB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRE80N065FSU2DB
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 375
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 120
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.45
   Tensión máxima de puerta-umbral |VGE(th)|, V: 5.5
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 90
   Capacitancia de salida (Cc), typ, pF: 350
   Carga total de la puerta (Qg), typ, nC: 162
   Paquete / Cubierta: TO247-4

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SRE80N065FSU2DB Datasheet (PDF)

 0.1. Size:1336K  sanrise-tech
sre80n065fsu2db.pdf

SRE80N065FSU2DB
SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with FRD SRE80N065FSU2DB General Description Symbol The SRE80N065FSU2DB is a Field Stop Trench CIGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, GConverter, etc. The SRE80N065FSU2DB package is TO-247-4. E1 E2Features High Breakd

 1.1. Size:1290K  sanrise-tech
sre80n065fsu2.pdf

SRE80N065FSU2DB
SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU2 General Description Symbol The SRE80N065FSU2 is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. GThe SRE80N065FSU2 package is TO-247. EFeatures High Breakdown Voltage to 650V Advanced Trench Fields

 2.1. Size:961K  sanrise-tech
sre80n065fsud8.pdf

SRE80N065FSU2DB
SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD8 General Description Symbol The SRE80N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD8 package is TO-247. Features Figure 1 Symbol o

 2.2. Size:1024K  sanrise-tech
sre80n065fsu.pdf

SRE80N065FSU2DB
SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU General Description Symbol The SRE80N065FSU is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. GThe SRE80N065FSU package is TO-247. Features E High Breakdown Voltage to 650V Figure 1 Symbol of SRE80N065F

 2.3. Size:1006K  sanrise-tech
sre80n065fsud6.pdf

SRE80N065FSU2DB
SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD6 General Description Symbol The SRE80N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD6 package is TO-247. Features Figure 1 Symbol o

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