SRE80N065FSU2DB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRE80N065FSU2DB  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 90 nS

Coesⓘ - Capacitancia de salida, typ: 350 pF

Encapsulados: TO247-4

  📄📄 Copiar 

 Búsqueda de reemplazo de SRE80N065FSU2DB IGBT

- Selecciónⓘ de transistores por parámetros

 

SRE80N065FSU2DB datasheet

 0.1. Size:1336K  sanrise-tech
 sre80n065fsu2db.pdf pdf_icon

SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with FRD SRE80N065FSU2DB General Description Symbol The SRE80N065FSU2DB is a Field Stop Trench C IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, G Converter, etc. The SRE80N065FSU2DB package is TO-247-4. E1 E2 Features High Breakd

 1.1. Size:1290K  sanrise-tech
 sre80n065fsu2.pdf pdf_icon

SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU2 General Description Symbol The SRE80N065FSU2 is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. G The SRE80N065FSU2 package is TO-247. E Features High Breakdown Voltage to 650V Advanced Trench Fields

 2.1. Size:961K  sanrise-tech
 sre80n065fsud8.pdf pdf_icon

SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD8 General Description Symbol The SRE80N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD8 package is TO-247. Features Figure 1 Symbol o

 2.2. Size:1024K  sanrise-tech
 sre80n065fsu.pdf pdf_icon

SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU General Description Symbol The SRE80N065FSU is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. G The SRE80N065FSU package is TO-247. Features E High Breakdown Voltage to 650V Figure 1 Symbol of SRE80N065F

MOSTRAR MÁS

Otros transistores... SRE60N065FSUD6, SRE60N065FSUDG, SRE60N120FSSDAT, SRE60N120FSSDATP, SRE75N065FSU2DH, SRE75N065FSUD6, SRE80N065FSU, SRE80N065FSU2, CRG60T60AN3H, SRE80N065FSUD6, SRE80N065FSUD8, OST80N65HMF, HCKW75N65GH2, HCKZ75N65GH2, CRG40T120BK3S, GT30G122, IGW40T60