Справочник IGBT. SRE80N065FSU2DB

 

SRE80N065FSU2DB - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SRE80N065FSU2DB
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 375
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 120
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.45
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 90
   Емкость коллектора типовая (Cc), pf: 350
   Общий заряд затвора (Qg), typ, nC: 162
   Тип корпуса: TO247-4

 Аналог (замена) для SRE80N065FSU2DB

 

 

SRE80N065FSU2DB Datasheet (PDF)

 0.1. Size:1336K  sanrise-tech
 sre80n065fsu2db.pdf

SRE80N065FSU2DB SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with FRD SRE80N065FSU2DB General Description Symbol The SRE80N065FSU2DB is a Field Stop Trench CIGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, GConverter, etc. The SRE80N065FSU2DB package is TO-247-4. E1 E2Features High Breakd

 1.1. Size:1290K  sanrise-tech
 sre80n065fsu2.pdf

SRE80N065FSU2DB SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU2 General Description Symbol The SRE80N065FSU2 is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. GThe SRE80N065FSU2 package is TO-247. EFeatures High Breakdown Voltage to 650V Advanced Trench Fields

 2.1. Size:961K  sanrise-tech
 sre80n065fsud8.pdf

SRE80N065FSU2DB SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD8 General Description Symbol The SRE80N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD8 package is TO-247. Features Figure 1 Symbol o

 2.2. Size:1024K  sanrise-tech
 sre80n065fsu.pdf

SRE80N065FSU2DB SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU General Description Symbol The SRE80N065FSU is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. GThe SRE80N065FSU package is TO-247. Features E High Breakdown Voltage to 650V Figure 1 Symbol of SRE80N065F

 2.3. Size:1006K  sanrise-tech
 sre80n065fsud6.pdf

SRE80N065FSU2DB SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD6 General Description Symbol The SRE80N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD6 package is TO-247. Features Figure 1 Symbol o

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