Справочник IGBT. SRE80N065FSU2DB

 

SRE80N065FSU2DB - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SRE80N065FSU2DB
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 90 nS
   Coesⓘ - Выходная емкость, типовая: 350 pF
   Qgⓘ - Общий заряд затвора, typ: 162 nC
   Тип корпуса: TO247-4

 Аналог (замена) для SRE80N065FSU2DB

 

 

SRE80N065FSU2DB Datasheet (PDF)

 0.1. Size:1336K  sanrise-tech
 sre80n065fsu2db.pdf

SRE80N065FSU2DB SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with FRD SRE80N065FSU2DB General Description Symbol The SRE80N065FSU2DB is a Field Stop Trench CIGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, GConverter, etc. The SRE80N065FSU2DB package is TO-247-4. E1 E2Features High Breakd

 1.1. Size:1290K  sanrise-tech
 sre80n065fsu2.pdf

SRE80N065FSU2DB SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU2 General Description Symbol The SRE80N065FSU2 is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. GThe SRE80N065FSU2 package is TO-247. EFeatures High Breakdown Voltage to 650V Advanced Trench Fields

 2.1. Size:961K  sanrise-tech
 sre80n065fsud8.pdf

SRE80N065FSU2DB SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD8 General Description Symbol The SRE80N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD8 package is TO-247. Features Figure 1 Symbol o

 2.2. Size:1024K  sanrise-tech
 sre80n065fsu.pdf

SRE80N065FSU2DB SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU General Description Symbol The SRE80N065FSU is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. GThe SRE80N065FSU package is TO-247. Features E High Breakdown Voltage to 650V Figure 1 Symbol of SRE80N065F

 2.3. Size:1006K  sanrise-tech
 sre80n065fsud6.pdf

SRE80N065FSU2DB SRE80N065FSU2DB

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD6 General Description Symbol The SRE80N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD6 package is TO-247. Features Figure 1 Symbol o

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