IXGH40N30S Todos los transistores

 

IXGH40N30S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH40N30S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 300 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8(max) V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Coesⓘ - Capacitancia de salida, typ: 210 pF
   Qgⓘ - Carga total de la puerta, typ: 145 nC
   Paquete / Cubierta: TO247SMD
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IXGH40N30S Datasheet (PDF)

 ..1. Size:92K  ixys
ixgh40n30 ixgh40n30a ixgh40n30b ixgh40n30s ixgh40n30as ixgh40n30bs.pdf pdf_icon

IXGH40N30S

VCES IC25 VCE(sat) tfiHiPerFASTTM IGBTIXGH 40N30/S 300 V 60 A 1.8 V 220nsIXGH 40N30A/S 300 V 60 A 2.1 V 120nsIXGH 40N30B/S 300 V 60 A 2.4 V 75 nsSymbol Test Conditions Maximum Ratings TO-247 SMD*VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C; RGE = 1 M 300 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VTO-247 ADIC25 TC = 25C 60 AIC90 TC = 90C

 5.1. Size:92K  ixys
ixgh40n30.pdf pdf_icon

IXGH40N30S

VCES IC25 VCE(sat) tfiHiPerFASTTM IGBTIXGH 40N30/S 300 V 60 A 1.8 V 220nsIXGH 40N30A/S 300 V 60 A 2.1 V 120nsIXGH 40N30B/S 300 V 60 A 2.4 V 75 nsSymbol Test Conditions Maximum Ratings TO-247 SMD*VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C; RGE = 1 M 300 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VTO-247 ADIC25 TC = 25C 60 AIC90 TC = 90C

 5.2. Size:80K  ixys
ixgh40n30bd1.pdf pdf_icon

IXGH40N30S

IXGH40N30BD1VCES = 300 VHiPerFASTTM IGBTIC25 = 60 AVCE(sat) = 2.4 Vtfi = 75 nsTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25 C to 150 C 300 VVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VVGES Continuous 20 VGC (TAB)VGEM Transient 30 VCEIC25 TC = 25 C60 AG = Gate, C = Collector,IC90 TC = 90 C40 AE = Emitter, TAB = CollectorICM TC = 25 C, 1 ms 160

 7.1. Size:145K  ixys
ixgh40n60c2.pdf pdf_icon

IXGH40N30S

VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1

Otros transistores... IXGH32N60BU1 , IXGH32N60C , IXGH32N60CD1 , IXGH38N60 , IXGH39N60B , IXGH39N60BD1 , IXGH39N60BS , IXGH40N30 , GT30F125 , IXGH40N30A , IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B .

History: STGWT40V60DLF | FGD3N60LSD

 

 
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History: STGWT40V60DLF | FGD3N60LSD

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