IXGH40N30S
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IXGH40N30S
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 200
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 300
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
60
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.8(max)
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 5
V
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 40
nS
Coesⓘ - Выходная емкость, типовая: 210
pF
Qgⓘ - Общий заряд затвора, typ: 145
nC
Тип корпуса: TO247SMD
Аналог (замена) для IXGH40N30S
IXGH40N30S
Datasheet (PDF)
..1. Size:92K ixys
ixgh40n30 ixgh40n30a ixgh40n30b ixgh40n30s ixgh40n30as ixgh40n30bs.pdf 
VCES IC25 VCE(sat) tfiHiPerFASTTM IGBTIXGH 40N30/S 300 V 60 A 1.8 V 220nsIXGH 40N30A/S 300 V 60 A 2.1 V 120nsIXGH 40N30B/S 300 V 60 A 2.4 V 75 nsSymbol Test Conditions Maximum Ratings TO-247 SMD*VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C; RGE = 1 M 300 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VTO-247 ADIC25 TC = 25C 60 AIC90 TC = 90C
5.1. Size:92K ixys
ixgh40n30.pdf 
VCES IC25 VCE(sat) tfiHiPerFASTTM IGBTIXGH 40N30/S 300 V 60 A 1.8 V 220nsIXGH 40N30A/S 300 V 60 A 2.1 V 120nsIXGH 40N30B/S 300 V 60 A 2.4 V 75 nsSymbol Test Conditions Maximum Ratings TO-247 SMD*VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C; RGE = 1 M 300 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VTO-247 ADIC25 TC = 25C 60 AIC90 TC = 90C
5.2. Size:80K ixys
ixgh40n30bd1.pdf 
IXGH40N30BD1VCES = 300 VHiPerFASTTM IGBTIC25 = 60 AVCE(sat) = 2.4 Vtfi = 75 nsTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25 C to 150 C 300 VVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VVGES Continuous 20 VGC (TAB)VGEM Transient 30 VCEIC25 TC = 25 C60 AG = Gate, C = Collector,IC90 TC = 90 C40 AE = Emitter, TAB = CollectorICM TC = 25 C, 1 ms 160
7.1. Size:145K ixys
ixgh40n60c2.pdf 
VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1
7.2. Size:52K ixys
ixgh40n60.pdf 
VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 VHigh speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C40 A TO-204 AE (IXGM)I
7.3. Size:213K ixys
ixgh40n120b2d1.pdf 
High Voltage IGBTs VCES = 1200VIXGH40N120B2D1w/DiodeIXGT40N120B2D1IC110 = 40AVCE(sat) 3.5Vtfi(typ) = 140nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VGC (TAB)CVGEM Transient 30 VEIC25 TC = 25C (Limited by Lead) 75 AIC110 TC =
7.4. Size:52K ixys
ixgh40n60a.pdf 
VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 VHigh speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C40 A TO-204 AE (IXGM)I
7.5. Size:162K ixys
ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf 
HiPerFASTTM IGBTIXGH40N60C2D1 VCES = 600VIXGT40N60C2D1 IC25 = 75Awith Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32nsC2-Class High Speed IGBTsTO-247(IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V C (TAB)CEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-268 (D3) ( IXGT)VGEM Transient 30 V
7.6. Size:291K ixys
ixgh40n60b ixgt40n60b.pdf 
IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C
7.7. Size:122K ixys
ixgh40n60c.pdf 
VCES = 600 VIXGH 40N60CHiPerFASTTM IGBTIC25 = 75 AIXGT 40N60CLightspeedTM SeriesVCE(sat) = 2.5 Vtfi typ = 75 nsPreliminary DataTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC110 TC = 11
7.8. Size:168K ixys
ixgh40n60c2d1.pdf 
HiPerFASTTM IGBTsVCES = 600VIXGT40N60C2D1IC110 = 40Aw/ DiodeIXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1tfi(typ) = 32nsC2-Class High Speed IGBTsTO-268 (IXGT)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-268 (IXGJ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 V
7.9. Size:169K ixys
ixgh40n120c3.pdf 
Preliminary Technical InformationTMVCES = 1200VGenX3 1200V IGBT IXGH40N120C3IC110 = 40AVCE(sat) 4.4VHigh speed PT IGBTstfi(typ) = 57nsfor 20 - 50 kHz switchingSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VTO-247 (IXGH)VCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25
7.10. Size:168K ixys
ixgh40n120a2.pdf 
IXGH 40N120A2IXGT 40N120A2IXGH 40N120A2 VCES = 1200 VHigh Voltage IGBTIXGT 40N120A2 IC25 = 75 ALow VCE(sat)VCE(sat) 2.0 VPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VCES TJ = 25C to 150C 1200 VVCES TJ = 25C to 150C 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C, IGBT chip capabilit
7.12. Size:149K ixys
ixgh40n60c2 ixgt40n60c2.pdf 
VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1
7.13. Size:578K ixys
ixgh40n60b2 ixgt40n60b2.pdf 
Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)
7.14. Size:575K ixys
ixgh40n60b2.pdf 
Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)
7.15. Size:291K ixys
ixgh40n60b.pdf 
IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C
7.16. Size:196K ixys
ixgh40n120c3d1.pdf 
Preliminary Technical InformationVCES = 1200VGenX3TM C3-ClassIXGH40N120C3D1IC110 = 40AIGBT w/Diode VCE(sat) 4.4V tfi(typ) = 57nsHigh Speed PT IGBTfor 20 - 50 kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGTAB
7.17. Size:513K ixys
ixgh40n60b2d1.pdf 
VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)
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