SRE80N065FSUD8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRE80N065FSUD8
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 90 nS
Coesⓘ - Capacitancia de salida, typ: 350 pF
Qgⓘ - Carga total de la puerta, typ: 150 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de SRE80N065FSUD8 - IGBT
SRE80N065FSUD8 Datasheet (PDF)
sre80n065fsud8.pdf
Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD8 General Description Symbol The SRE80N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD8 package is TO-247. Features Figure 1 Symbol o
sre80n065fsud6.pdf
Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD6 General Description Symbol The SRE80N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD6 package is TO-247. Features Figure 1 Symbol o
sre80n065fsu.pdf
Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU General Description Symbol The SRE80N065FSU is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. GThe SRE80N065FSU package is TO-247. Features E High Breakdown Voltage to 650V Figure 1 Symbol of SRE80N065F
sre80n065fsu2.pdf
Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU2 General Description Symbol The SRE80N065FSU2 is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. GThe SRE80N065FSU2 package is TO-247. EFeatures High Breakdown Voltage to 650V Advanced Trench Fields
sre80n065fsu2db.pdf
Datasheet 80A 650V Trench Fieldstop IGBT with FRD SRE80N065FSU2DB General Description Symbol The SRE80N065FSU2DB is a Field Stop Trench CIGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, GConverter, etc. The SRE80N065FSU2DB package is TO-247-4. E1 E2Features High Breakd
Otros transistores... SRE60N120FSSDAT , SRE60N120FSSDATP , SRE75N065FSU2DH , SRE75N065FSUD6 , SRE80N065FSU , SRE80N065FSU2 , SRE80N065FSU2DB , SRE80N065FSUD6 , IHW20N120R3 , OST80N65HMF , HCKW75N65GH2 , HCKZ75N65GH2 , CRG40T120BK3S , GT30G122 , IGW40T60 , IGW40T60K , IKW75N60TA .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2