SRE80N065FSUD8 IGBT. Datasheet pdf. Equivalent
Type Designator: SRE80N065FSUD8
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 375
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 100
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 90
Collector Capacity (Cc), typ, pF: 350
Total Gate Charge (Qg), typ, nC: 150
Package: TO247
SRE80N065FSUD8 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SRE80N065FSUD8 Datasheet (PDF)
sre80n065fsud8.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD8 General Description Symbol The SRE80N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD8 package is TO-247. Features Figure 1 Symbol o
sre80n065fsud6.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD6 General Description Symbol The SRE80N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD6 package is TO-247. Features Figure 1 Symbol o
sre80n065fsu.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU General Description Symbol The SRE80N065FSU is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. GThe SRE80N065FSU package is TO-247. Features E High Breakdown Voltage to 650V Figure 1 Symbol of SRE80N065F
sre80n065fsu2.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU2 General Description Symbol The SRE80N065FSU2 is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. GThe SRE80N065FSU2 package is TO-247. EFeatures High Breakdown Voltage to 650V Advanced Trench Fields
sre80n065fsu2db.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 80A 650V Trench Fieldstop IGBT with FRD SRE80N065FSU2DB General Description Symbol The SRE80N065FSU2DB is a Field Stop Trench CIGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, GConverter, etc. The SRE80N065FSU2DB package is TO-247-4. E1 E2Features High Breakd
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
![SRE80N065FSUD8](https://alltransistors.com/images/us.png)
![SRE80N065FSUD8](https://alltransistors.com/images/es.png)
![SRE80N065FSUD8](https://alltransistors.com/images/ru.png)
LIST
Last Update
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ