IKW75N60TA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW75N60TA
Tipo de transistor: IGBT + Diode
Código de marcado: K75T60A
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 428 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 36 nS
Coesⓘ - Capacitancia de salida, typ: 288 pF
Qgⓘ - Carga total de la puerta, typ: 470 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW75N60TA IGBT
IKW75N60TA Datasheet (PDF)
ikw75n60ta.pdf

IKW75N60TA TRENCHSTOPTM Series q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CGE Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5
ikw75n60t.pdf

IKW75N60TTRENCHSTOP Series qLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeC Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5sG Positive temperature coefficient in VCE(sat)E very tight parameter distribution high rugg
ikw75n60trev2 6g.pdf

IKW75N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5s E Positive temperature coefficient in VCE(sat) very tight parameter distribution high rugg
aikw75n60ct.pdf

AIKW75N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor
Otros transistores... SRE80N065FSUD8 , OST80N65HMF , HCKW75N65GH2 , HCKZ75N65GH2 , CRG40T120BK3S , GT30G122 , IGW40T60 , IGW40T60K , RJH30E2DPP , IGW40N60TP , IXSM35N100A , IXSM40N60 , GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 .



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