IKW75N60TA Datasheet. Specs and Replacement

Type Designator: IKW75N60TA  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 428 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 288 pF

Package: TO247

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IKW75N60TA datasheet

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IKW75N60TA

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 5.1. Size:853K  infineon
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IKW75N60TA

IKW75N60T TRENCHSTOP Series q Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Positive temperature coefficient in VCE(sat) E very tight parameter distribution high rugg... See More ⇒

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IKW75N60TA

IKW75N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E Positive temperature coefficient in VCE(sat) very tight parameter distribution high rugg... See More ⇒

 6.1. Size:1972K  infineon
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IKW75N60TA

AIKW75N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor... See More ⇒

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Specs: SRE80N065FSUD8, OST80N65HMF, HCKW75N65GH2, HCKZ75N65GH2, CRG40T120BK3S, GT30G122, IGW40T60, IGW40T60K, IKW75N60T, IGW40N60TP, IXSM35N100A, IXSM40N60, GT45F122, GT30G131, DGU4020GR, GT30F126, GT30F133

Keywords - IKW75N60TA transistor spec

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