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HIA50N65H-JA IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HIA50N65H-JA
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 272 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 32 nS
   Coesⓘ - Capacitancia de salida, typ: 140 pF
   Paquete / Cubierta: TO247
 

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HIA50N65H-JA PDF specs

 ..1. Size:479K  semihow
 hia50n65h-ja.pdf pdf_icon

HIA50N65H-JA

Nov 2022 HIA50N65H-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 2.10 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Solar ... See More ⇒

 4.1. Size:475K  semihow
 hia50n65h-sa.pdf pdf_icon

HIA50N65H-JA

Jun 2023 HIA50N65H-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 1.60 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Solar ... See More ⇒

 6.1. Size:472K  semihow
 hia50n65ih-sa.pdf pdf_icon

HIA50N65H-JA

Mar 2023 HIA50N65IH-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.35 V Soft Fast Reverse Recovery Diode Etot 1.88 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Induc... See More ⇒

 6.2. Size:475K  semihow
 hia50n65ih-ja.pdf pdf_icon

HIA50N65H-JA

Nov 2022 HIA50N65IH-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.35 V Soft Fast Reverse Recovery Diode Etot 2.00 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Induc... See More ⇒

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Otros transistores... GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , CRG15T120BNR3S , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 , SG40T120DB , SG60T120UDB3 , SGT60U65FD1PN .

 

 
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