HIA50N65H-JA
IGBT. Datasheet pdf. Equivalent
Type Designator: HIA50N65H-JA
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 272
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 100
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.45
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7
V
Tjⓘ -
Maximum Junction Temperature: 175
℃
trⓘ - Rise Time, typ: 32
nS
Coesⓘ - Output Capacitance, typ: 140
pF
Qgⓘ -
Total Gate Charge, typ: 105
nC
Package:
TO247
HIA50N65H-JA
Transistor Equivalent Substitute - IGBT Cross-Reference Search
HIA50N65H-JA
Datasheet (PDF)
..1. Size:479K semihow
hia50n65h-ja.pdf 
Nov 2022HIA50N65H-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 2.10 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar
4.1. Size:475K semihow
hia50n65h-sa.pdf
Jun 2023HIA50N65H-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 1.60 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar
6.1. Size:472K semihow
hia50n65ih-sa.pdf
Mar 2023HIA50N65IH-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 1.88 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc
6.2. Size:475K semihow
hia50n65ih-ja.pdf
Nov 2022HIA50N65IH-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 2.00 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc
6.3. Size:481K semihow
hia50n65t-ja.pdf
Nov 2022HIA50N65T-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 2.20 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &
6.4. Size:477K semihow
hia50n65t-sa.pdf
Mar 2023HIA50N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 1.76 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &
Datasheet: GT30F132
, HIHS50N65H-SA
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, HIA40N120T-SA
, HIA30N140CIH-DA
, HIA50N65T-JA
, GT30F131
, HIA50N65T-SA
, HIA50N65H-SA
, HIA50N65IH-JA
, HIA20N140IH-DA
, GT30F122
, SG40T120DB
, SG60T120UDB3
, SGT60U65FD1PN
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