SG40T120DB Todos los transistores

SG40T120DB Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches VCES = 1200V Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 IC100 = 40A B 20.80 21.46 0.819 0.845 VCE(sat) 2.9V C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 tfi(typ) = 60ns G=Gate, C=Collector, E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 E=Emitter,TAB=Collector G 1.65 2.13 0.065 0.084 H - 4.5 - 0.1... See More ⇒

MSG40T120FH High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod... See More ⇒

MSG40T120FH/FHW High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance paralleling CE(sat) and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin... See More ⇒

MSG40T120FL High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod... See More ⇒

MSG40T120FQC Features Low gate charge. Trench FS Technology Saturation Voltage VCE(sat) = 1.8V @ IC = 40 A RoHS Complaint Applications General purpose inverters UPS Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 1200 CES V Gate to Emitter Voltage V 20 GES Turn-off safe area - 160 A T =25 80 C Collector Curren... See More ⇒