SG40T120DB
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SG40T120DB
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.7
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6.5
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 82
nS
Coesⓘ - Capacitancia de salida, typ: 200
pF
Qgⓘ - Carga total de la puerta, typ: 170
nC
Paquete / Cubierta:
TO247
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- IGBT
SG40T120DB
Datasheet (PDF)
..1. Size:743K 1
sg40t120db.pdf 
SG40T120DBDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesVCES = 1200V Min. Max. Min. Max.A 19.81 20.32 0.780 0.800IC100 = 40A B 20.80 21.46 0.819 0.845VCE(sat) 2.9V C 15.75 16.26 0.610 0.640D 3.55 3.65 0.140 0.144tfi(typ) = 60nsG=Gate, C=Collector, E 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244E=Emitter,TAB=CollectorG 1.65 2.13 0.065 0.084H - 4.5 - 0.1
6.1. Size:3086K cn maspower
msg40t120fh.pdf
MSG40T120FHHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod
6.2. Size:1718K cn maspower
msg40t120fh msg40t120fhw.pdf
MSG40T120FH/FHWHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance parallelingCE(sat)and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin
6.3. Size:1479K cn maspower
msg40t120fl.pdf
MSG40T120FLHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod
6.4. Size:6609K cn maspower
msg40t120fqc.pdf
MSG40T120FQCFeatures Low gate charge. Trench FS Technology Saturation Voltage:VCE(sat) = 1.8V @ IC = 40 A RoHS ComplaintApplications General purpose inverters UPSAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 1200CESVGate to Emitter Voltage V 20GESTurn-off safe area - 160 AT =25 80CCollector Curren
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