SG40T120DB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SG40T120DB  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 300 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃

trⓘ - Tiempo de subida, typ: 82 nS

Coesⓘ - Capacitancia de salida, typ: 200 pF

Encapsulados: TO247

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SG40T120DB datasheet

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 sg40t120db.pdf pdf_icon

SG40T120DB

SG40T120DB Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches VCES = 1200V Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 IC100 = 40A B 20.80 21.46 0.819 0.845 VCE(sat) 2.9V C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 tfi(typ) = 60ns G=Gate, C=Collector, E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 E=Emitter,TAB=Collector G 1.65 2.13 0.065 0.084 H - 4.5 - 0.1

 6.1. Size:3086K  cn maspower
 msg40t120fh.pdf pdf_icon

SG40T120DB

MSG40T120FH High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

 6.2. Size:1718K  cn maspower
 msg40t120fh msg40t120fhw.pdf pdf_icon

SG40T120DB

MSG40T120FH/FHW High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance paralleling CE(sat) and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin

 6.3. Size:1479K  cn maspower
 msg40t120fl.pdf pdf_icon

SG40T120DB

MSG40T120FL High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

MOSTRAR MÁS

Otros transistores... HIA30N140CIH-DA, HIA50N65T-JA, HIA50N65H-JA, HIA50N65T-SA, HIA50N65H-SA, HIA50N65IH-JA, HIA20N140IH-DA, GT30F122, SGP30N60, SG60T120UDB3, SGT60U65FD1PN, SGT60U65FD1PT, OST120N65H4SMF, OST120N65H4UMF, OST120N65H5SMF, OST120N65HEMF, OST15N65DRF