All IGBT. SG40T120DB Datasheet

 

SG40T120DB IGBT. Datasheet pdf. Equivalent


   Type Designator: SG40T120DB
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 300
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 82
   Collector Capacity (Cc), typ, pF: 200
   Total Gate Charge (Qg), typ, nC: 170
   Package: TO247

 SG40T120DB Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SG40T120DB Datasheet (PDF)

 ..1. Size:743K  1
 sg40t120db.pdf

SG40T120DB SG40T120DB

SG40T120DBDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesVCES = 1200V Min. Max. Min. Max.A 19.81 20.32 0.780 0.800IC100 = 40A B 20.80 21.46 0.819 0.845VCE(sat) 2.9V C 15.75 16.26 0.610 0.640D 3.55 3.65 0.140 0.144tfi(typ) = 60nsG=Gate, C=Collector, E 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244E=Emitter,TAB=CollectorG 1.65 2.13 0.065 0.084H - 4.5 - 0.1

 6.1. Size:3086K  cn maspower
 msg40t120fh.pdf

SG40T120DB SG40T120DB

MSG40T120FHHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

 6.2. Size:1718K  cn maspower
 msg40t120fh msg40t120fhw.pdf

SG40T120DB SG40T120DB

MSG40T120FH/FHWHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance parallelingCE(sat)and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin

 6.3. Size:1479K  cn maspower
 msg40t120fl.pdf

SG40T120DB SG40T120DB

MSG40T120FLHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

 6.4. Size:6609K  cn maspower
 msg40t120fqc.pdf

SG40T120DB SG40T120DB

MSG40T120FQCFeatures Low gate charge. Trench FS Technology Saturation Voltage:VCE(sat) = 1.8V @ IC = 40 A RoHS ComplaintApplications General purpose inverters UPSAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 1200CESVGate to Emitter Voltage V 20GESTurn-off safe area - 160 AT =25 80CCollector Curren

Datasheet: HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 , NCE80TD65BT , SG60T120UDB3 , SGT60U65FD1PN , SGT60U65FD1PT , OST120N65H4SMF , OST120N65H4UMF , OST120N65H5SMF , OST120N65HEMF , OST15N65DRF .

 

 
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