SG60T120UDB3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SG60T120UDB3
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 350
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 100
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
Tensión máxima de puerta-umbral |VGE(th)|, V: 7
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 56
Capacitancia de salida (Cc), typ, pF: 270
Carga total de la puerta (Qg), typ, nC: 250
Paquete / Cubierta: TO264
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SG60T120UDB3 Datasheet (PDF)
sg60t120udb3.pdf
SG60T120UDB3 Discrete IGBTs 20.00 0.20(2.00(8.30) (8.30)TO-264 (1.00)VCES = 1200V IC90 = 60A (0.50)VCEsat(typ) = 2.10V (7.00) (7.00)E = 2.4mJ(typ) off 2 U 0.204.90 (1.50(1.50)(1.50)G=Gate 0.202.50 3.00 0.201.00 + 0.25C=Collector 0.10E=Emitter0.60 + 0.255.45TYP 5.45TYP 0.10 2.80 0.30[5.45 0.30] [5.45
msg60t120fqw.pdf
MSG60T120FQWFeatures High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 60A Tj=25 100% avalanche testedApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 20GEST =25C 120CCollector curre ICT =100C 60CAPu
msg60t65hhc0.pdf
MSG60T65HHC0Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage:VCE(sat),typ= 1.5V @IC=50A and TC=25Applications General purpose inverters Induction heating(IH) Welding Converters UPSAbsolute RatingsTc=25Parameter Symbol MSG25T120FLC UnitCollector-Emmiter Voltage Vces 650 V120 AIc T=25Co
msg60t65fhc.pdf
MSG60T65FHCFeatures Low gate charge Trench-Stop Technology High speed switching Saturation voltage:VCE(sat),typ= 1.85V @IC=60A and TC=25Applications General purpose inverters Induction heating(IH) Welding Converters UPSAbsolute RatingsTc=25Parameter Symbol MSG25T120FLC UnitCollector-Emmiter Voltage Vces 650 V120 AIc T=25Co
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ