SG60T120UDB3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SG60T120UDB3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 350 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 56 nS
Coesⓘ - Capacitancia de salida, typ: 270 pF
Paquete / Cubierta: TO264
Búsqueda de reemplazo de SG60T120UDB3 IGBT
SG60T120UDB3 PDF specs
sg60t120udb3.pdf
SG60T120UDB3 Discrete IGBTs 20.00 0.20 (2.00 (8.30) (8.30) TO-264 (1.00) VCES = 1200V IC90 = 60A (0.50) VCEsat(typ) = 2.10V (7.00) (7.00) E = 2.4mJ (typ) off 2 U 0.20 4.90 (1.50 (1.50) (1.50) G=Gate 0.20 2.50 3.00 0.20 1.00 + 0.25 C=Collector 0.10 E=Emitter 0.60 + 0.25 5.45TYP 5.45TYP 0.10 2.80 0.30 [5.45 0.30] [5.45 ... See More ⇒
msg60t120fqw.pdf
MSG60T120FQW Features High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 60A Tj=25 100% avalanche tested Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 CES V Gate-emitter voltage V 20 GES T =25 C 120 C Collector curre I C T =100 C 60 C A Pu... See More ⇒
msg60t65hhc0.pdf
MSG60T65HHC0 Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage VCE(sat),typ= 1.5V @ IC=50A and TC=25 Applications General purpose inverters Induction heating(IH) Welding Converters UPS Absolute Ratings Tc=25 Parameter Symbol MSG25T120FLC Unit Collector-Emmiter Voltage Vces 650 V 120 A Ic T=25 Co... See More ⇒
msg60t65fhc.pdf
MSG60T65FHC Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage VCE(sat),typ= 1.85V @ IC=60A and TC=25 Applications General purpose inverters Induction heating(IH) Welding Converters UPS Absolute Ratings Tc=25 Parameter Symbol MSG25T120FLC Unit Collector-Emmiter Voltage Vces 650 V 120 A Ic T=25 Co... See More ⇒
Otros transistores... HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 , SG40T120DB , IKW50N60H3 , SGT60U65FD1PN , SGT60U65FD1PT , OST120N65H4SMF , OST120N65H4UMF , OST120N65H5SMF , OST120N65HEMF , OST15N65DRF , OST15N65FRF .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
c2274 transistor | c5200 2sc5200 transistor datasheet | d2390 datasheet | 2sa750 replacement | 2sc984 replacement | a1046 transistor | hy19p03 | 2sk2749





