SG60T120UDB3 - аналоги, параметры транзистора

SG60T120UDB3 даташит

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SG60T120UDB3 Discrete IGBTs 20.00 0.20 (2.00 (8.30) (8.30) TO-264 (1.00) VCES = 1200V IC90 = 60A (0.50) VCEsat(typ) = 2.10V (7.00) (7.00) E = 2.4mJ (typ) off 2 U 0.20 4.90 (1.50 (1.50) (1.50) G=Gate 0.20 2.50 3.00 0.20 1.00 + 0.25 C=Collector 0.10 E=Emitter 0.60 + 0.25 5.45TYP 5.45TYP 0.10 2.80 0.30 [5.45 0.30] [5.45

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msg60t120fqw.pdf pdf_icon

MSG60T120FQW Features High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 60A Tj=25 100% avalanche tested Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 CES V Gate-emitter voltage V 20 GES T =25 C 120 C Collector curre I C T =100 C 60 C A Pu

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msg60t65hhc0.pdf pdf_icon

MSG60T65HHC0 Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage VCE(sat),typ= 1.5V @ IC=50A and TC=25 Applications General purpose inverters Induction heating(IH) Welding Converters UPS Absolute Ratings Tc=25 Parameter Symbol MSG25T120FLC Unit Collector-Emmiter Voltage Vces 650 V 120 A Ic T=25 Co

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msg60t65fhc.pdf pdf_icon

MSG60T65FHC Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage VCE(sat),typ= 1.85V @ IC=60A and TC=25 Applications General purpose inverters Induction heating(IH) Welding Converters UPS Absolute Ratings Tc=25 Parameter Symbol MSG25T120FLC Unit Collector-Emmiter Voltage Vces 650 V 120 A Ic T=25 Co

Другие IGBT... HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 , SG40T120DB , IKW50N60H3 , SGT60U65FD1PN , SGT60U65FD1PT , OST120N65H4SMF , OST120N65H4UMF , OST120N65H5SMF , OST120N65HEMF , OST15N65DRF , OST15N65FRF .