SG60T120UDB3 - параметры транзистора, его аналоги, Даташиты

SG60T120UDB3 Datasheet (PDF)

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SG60T120UDB3 Discrete IGBTs 20.00 0.20(2.00(8.30) (8.30)TO-264 (1.00)VCES = 1200V IC90 = 60A (0.50)VCEsat(typ) = 2.10V (7.00) (7.00)E = 2.4mJ(typ) off 2 U 0.204.90 (1.50(1.50)(1.50)G=Gate 0.202.50 3.00 0.201.00 + 0.25C=Collector 0.10E=Emitter0.60 + 0.255.45TYP 5.45TYP 0.10 2.80 0.30[5.45 0.30] [5.45

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msg60t120fqw.pdf pdf_icon

MSG60T120FQWFeatures High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 60A Tj=25 100% avalanche testedApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 20GEST =25C 120CCollector curre ICT =100C 60CAPu

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msg60t65hhc0.pdf pdf_icon

MSG60T65HHC0Features Low gate charge Trench-Stop Technology High speed switching Saturation voltage:VCE(sat),typ= 1.5V @IC=50A and TC=25Applications General purpose inverters Induction heating(IH) Welding Converters UPSAbsolute RatingsTc=25Parameter Symbol MSG25T120FLC UnitCollector-Emmiter Voltage Vces 650 V120 AIc T=25Co

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msg60t65fhc.pdf pdf_icon

MSG60T65FHCFeatures Low gate charge Trench-Stop Technology High speed switching Saturation voltage:VCE(sat),typ= 1.85V @IC=60A and TC=25Applications General purpose inverters Induction heating(IH) Welding Converters UPSAbsolute RatingsTc=25Parameter Symbol MSG25T120FLC UnitCollector-Emmiter Voltage Vces 650 V120 AIc T=25Co

Другие IGBT... HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 , SG40T120DB , CRG60T60AK3HD , SGT60U65FD1PN , SGT60U65FD1PT , OST120N65H4SMF , OST120N65H4UMF , OST120N65H5SMF , OST120N65HEMF , OST15N65DRF , OST15N65FRF .